Intel Corporation

Tian-An Chen

Song-Hua Shi

Daoqiang Lu

Lejun Wang

Kevin O'Brien

James Chris Matayabas, Jr

Michael D Goodner

Paul A Koning

Robert P Meagley

Christopher L Rumer

James M Powers

Terry Lee Sterrett

Vijay Wakharkar

Rahul N Manepalli

Saikumar Jayaraman

Eric Jin Li

Huey-Chiang Liou

Vassoudevane Lebonheur

Jason Jieping Zhang

Katrina Certeza

A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.

Forming semiconductor structures

An embodiment of the present invention is a technique to form a resin. A mixture is formed by a curing agent dissolved in the epoxy resin. The epoxy resin contains a first rigid rod mesogen. The curing agent contains a second rigid rod mesogen and one of a hydroxyl, amine, and anhydride.

Low coefficient of thermal expansion (CTE) thermosetting resins for integrated circuit applications

A method for low temperature bumping is disclosed. A resin capable of being cross-linked by free-radical or cationic polymerization at low temperature is provided. Electrically conductive particles are then added to the resin to form a mixture. The mixture is then activated by heat or exposure to light to polymerize the mixture. In an alternative embodiment, a vinyl ether resin is used, to which electrically conductive particles are added. The mixture is polymerized by exposure to light.

Low temperature bumping process

In some embodiments, a method includes providing a composition which includes a base at least partially filled with filler particles and applying the composition as an underfill composition. At least some of the filler particles are electrically conductive.

No-flow underfill composition and method

Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a conformal layer of a water soluble nanopowder on a wafer, and then scribing the wafer.

Nanopowder coating for scribing and structures formed thereby

A system for underfilling in a chip package includes an underfill mixture that ameliorates the CTE mismatch that typically exists between a packaged die and a resin-impregnated fiberglass mounting substrate. In one embodiment, the system includes an underfill mixture that alone exhibits a CTE that is characteristic of an inorganic-filled underfill composite previously known. An embodiment is also directed to the assembly of a flip-chip package that uses an underfill mixture.

Flip-chip system and method of making same

Microelectronic packages formed by using novel fluxing agents are disclosed. In one aspect, a microelectronic package may include a microelectronic device, a substrate, and an interconnect structure including a solder material coupling the microelectronic device with the substrate. Underfill material may be included around the interconnect structure between the microelectronic device and the substrate. The underfill material may include an organic rosin acid moiety derived from an anhydride adduct of a rosin compound that was used as a fluxing agent. Methods of making such microelectronic packages using anhydride adducts of rosin compounds are also disclosed.

Microelectronic devices having underfill materials with improved fluxing agents

Amine-based no-flow underfill materials and a method to produce flip-chip devices electrically bonded to a substrate are described. The no-flow underfill material includes an amine-based curing agent and a fluxing agent, which activates at a fluxing temperature and is neutral at the temperatures lower than the fluxing temperature. The fluxing agent of the no-flow underfill material heated to the activation temperature generates a reactive acid in-situ during chip attachment process to facilitate joint formation. The no-flow underfill material is formed on the substrate. A chip is placed on the no-flow underfill material formed on the substrate. A temperature is increased to activate the fluxing agent. The temperature is further increased to form conductive joints between the chip and the substrate. Further, the no-flow underfill material is cured. The conductive joints between the chip and the substrate may be lead-free.

High performance amine based no-flow underfill materials for flip chip applications

An electronic structure includes an electronic device coupled to a substrate by conductive bumps and ball limiting metallurgy (BLM). Underfill material having filler particles is disposed in a space between the electronic device and the substrate. A weight percentage of the filler particles is at least about 60%. A particle size of at least 90 wt % of the filler particles is less than about 2 &#x3bc;m and/or the filler particles are coated by an organic coupling agent. Once the underfill material is fully cured, its coefficient of thermal expansion is no more than 30 PPM/&#xb0; C., and its glass transition temperature is at least 100&#xb0; C., and its adhesion to a passivation layer of the electronic device, to the substrate and to the electronic device at its edges is such that the electronic structure passes standardized reliability tests without delamination of the ball limiting metallurgy.

Underfill material to reduce ball limiting metallurgy delamination and cracking potential in semiconductor devices

Microelectronic and optoelectronic packaging embodiments are described with underfill materials including polybenzoxazine, having the general formula: 

Microelectronic or optoelectronic package having a polybenzoxazine-based film as an underfill material

A nano-sized solder suspension flows by selective wetting onto a bond pad and away from a bond-pad resist area. A microelectronic package is also disclosed that uses the nano-sized solder suspension. A method of assembling a microelectronic package is also disclosed. A computing system is also disclosed that includes a bump that was reflowed from the nano-sized solder suspension.

Method of assembling soldered packages utilizing selective solder deposition by self-assembly of nano-sized solder particles

Carborane may be used as a precursor to form low dielectric constant dielectrics. The carborane material may be modified to enable it to be deposited by chemical vapor deposition.

Forming chemical vapor depositable low dielectric constant layers

An underfill material, such as a no flow underfill material, containing an anhydride adduct of a rosin compound is disclosed. In one aspect, the anhydride adduct of a rosin compound contains an organic rosin acid moiety and a substitute moiety for a hydroxyl group of a carboxylic acid attached at an acyl group of the organic rosin acid moiety. In another aspect, the anhydride adduct of the rosin compound contains a plurality of linked organic rosin acid moieties. Methods of using the underfill materials and packages formed by curing the underfill materials are also disclosed.

Growing community of inventors

Phoenix, AZ, United States of America

Tian-An Chen