Siltronic Ag

Thorsten Schneppensieper

Reinhard Schauer

Epitaxially coated silicon wafers, are coated individually in an epitaxy reactor by placing a wafer on a susceptor, pretreating under a hydrogen atmosphere, in and then with addition of an etching medium, and coating epitaxially on a polished front side, wherein an etching treatment of the susceptor is effected after a specific number of epitaxial coatings, and the susceptor is then hydrophilized. Silicon wafer produced thereby have a maximum local flatness value SFQRof 0.01 &#x3bc;m to 0.035 &#x3bc;m relative to at least 99% of the partial regions of an area grid of measurement windows having a size of 26&#xd7;8 mmon the front side of the silicon wafer with an edge exclusion of 2 mm.

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Emmerting, Germany

Thorsten Schneppensieper