Infineon Technologies Ag

Thomas Tatry

Nicolas Nagel

Dirk Manger

Dirk Caspary

Matthias Markert

Martin Verhoeven

Hocine Boubekeur

A hard mask layer stack for patterning a layer to be patterned includes a carbon layer disposed on top of the layer to be patterned, a first layer of a material selected from the group of SiOand SiON disposed on top of the carbon layer and a silicon layer disposed on top of the first layer. A method of patterning a layer to be patterned includes providing the above described hard mask layer stack on the layer to be patterned and patterning the silicon hard mask layer in accordance with a pattern to be formed in the layer that has to be patterned.

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Dresden, Germany

Thomas Tatry