Entegris, Inc.

Thomas Parson

Emanuel Israel Cooper

Michael L White

Daniela White

Steven M Bilodeau

Jeffrey A Barnes

Hsing-Chen Wu

Sheng-Hung Tu

Donald Frye

Atanu Das

Steven Medd

Min-chieh Yang

Shrane-Ning Jenq

A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

Compositions and methods for removing ceria particles from a surface

A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.

Tungsten post-CMP cleaning composition

Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.

Ni:NiGe:Ge selective etch formulations and method of using same

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Billerica, MA, United States of America

Thomas Parson