Aixtron Se

Koninklijke Philips Corporation N.v.

U.S. Philips Corporation

Koninklijke Philips Electronics N.v.

Philips Intellectual Property & Standards Gmbh

Thomas Krücken

Gunther Hans Derra

Hans G Ganser

Hanns Ernst Fischer

Martin Dauelsberg

Holger Moench

Baskar Pagadala Gopi

Rob Snijkers

Günther Hans Derra

Martin Eickelkamp

A gas distributor for a CVD reactor includes two separate gas distribution chambers, into each of which a process gas can be fed through an infeed opening. Each of the gas distribution chambers is formed, in part, by a gas distribution device disposed in a top layer being in each case flow-connected to connecting channels disposed in a bottom layer. The connecting channels associated with different gas distribution chambers lie alternately adjacent to one another and have gas outlet openings for the process gases to escape. Each of the at least two gas distribution devices has a distribution section, which in each case is flow-connected to a plurality of sub-distribution sections. The connecting channels are flow-connected to at least one of the sub-distribution sections. The sub-distribution sections of different gas distribution chambers lie alternately adjacent to one another and are separated from one another by a dividing wall.

Gas distributor for a CVD reactor

In a method for depositing layers on one or more substrates arranged in a process chamber, at least one carbon-containing gaseous source material is used in at least one deposition step. During layer growth on the one or more substrates, parasitic coatings are also deposited on the wall surfaces of the process chamber. After removing the one or more substrates from the process chamber, a gas flow containing one or more cleaning gases is introduced into the process chamber and the process chamber is heated to a cleaning temperature. The parasitic coatings are transformed into volatile substances, which are removed from the process chamber with the gas flow. To remove a carbon-containing residue on the wall surfaces, an ammonia cleaning step is performed in which the carbon-containing residue reacts with ammonia to form a volatile compound which is removed from the process chamber with the gas flow.

MOCVD layer growth method with subsequent multi-stage cleaning step

A debris mitigation system for use in a radiation unit for EUV radiation and/or X-rays, for example, includes a foil trap having several passages allowing a straight passage of radiation, and one or several feed pipes for gas supply of buffer gas to the foil trap. The foil trap has an interior space extending over several of the passages, where the feed pipes open into the interior space.

Debris mitigation system with improved gas distribution

A circuit arrangement is provided for operating a high pressure discharge lamp with a lamp current which, in successive periods, has opposite polarities. The lamp is provided with at least two main electrodes being spaced an electrode distance from each other. The circuit arrangement includes input terminals for connection to a supply source, output terminals for connection to the high pressure discharge lamp, and an element, coupled to the input terminals, for supplying the lamp current to the high pressure discharge lamp, which current, in successive periods, has a predetermined shape. The circuit arrangement is provided with an element for detecting a first parameter indicative of the electrode distance and forming a first signal dependent on the first parameter and with an element for reshaping the lamp current, in successive periods, in dependence of the thus formed first signal.

Circuit arrangement for operating a high-pressure discharge lamp

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Aachen, Germany

Thomas Krücken