Sematech, Inc.

Mikros Manufacturing, Inc.

Thomas J Jasinski

Javier A Valenzuela

Franz T Geyling

A heat exchanger (HX) () utilizing a working fluid and having a high heat flux transfer capacity. The HX comprises a core () having a heat transfer surface (), a length and a width. Inlet manifolds () and outlet manifolds () located alternatingly across the width of the core extend the length of the core. Interconnecting channels () each fluidly communicate with a corresponding outlet manifold and the two inlet manifolds located immediately adjacent that outlet manifold. Heat exchanger fin () in thermal communication with the heat transfer surface () generally defines the surface of the interconnecting channels. A pathway directs the working fluid first towards and then away from heat transfer surface (128) in a direction substantially normal to the heat transfer surface. Heat is transferred to or from the working fluid from heat transfer fin () as the fluid flows toward and away from the heat transfer surface.

Heat exchanger

An apparatus for rapid thermal processing of silicon wafers is provided. The apparatus may include a heating element, sensing element and a cooling element, all of which are positioned in opposing relation to a backside of a silicon wafer. A method of using the apparatus includes using the apparatus to rapidly heat a wafer, apply desired processing assists, and rapidly cool the wafer. The apparatus may also include an array of sensing elements which are interposed between heating elements. The sensing elements may be a combination of absolute and relative sensors. The array permits accurate zonal control of the heating elements and prevents cross talk between the heaters. The apparatus may be used to monitor the temperature at various points across a wafer and to control the associated heating elements in response to the monitoring step. The apparatus may also include a high speed rotating support for the wafer. Further, the apparatus may include a shroud surrounding the wafer which allows for more uniform processing across the wafer. Also, an inlet structure for introducing processing assists which contours to the shape of the shroud is disclosed. A method for using the apparatus includes utilizing the inlet structure to provide processing assists over the surface of a wafer and obtaining uniform depositions by aid of the shroud.

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Lebanon, NH, United States of America

Thomas J Jasinski