Carl Zeiss Smt Gmbh

Thomas Fischer

Michael Patra

Hubert Holderer

Martin Endres

Stig Bieling

Lars Wischmeier

Alexander Winkler

Stefan Seitz

Daniel Lenz

Matthias Mueller

Sarina Wunderlich

Michael Ramolla

Annie Isaac

A measurement illumination optical unit guides illumination light into an object field of a projection exposure apparatus for EUV lithography. The illumination optical unit has a field facet mirror with a plurality of field facets and a pupil facet mirror with a plurality of pupil facets. The latter serve for overlaid imaging in the object field of field facet images of the field facets. A field facet imaging channel of the illumination light is guided via any one field facet and any one pupil facet. A field stop specifies a field boundary of an illumination field in the object plane. The illumination field has a greater extent along one field dimension than any one of the field facet images. At least some of the field facets include tilt actuators which help guide the illumination light into the illumination field via various field facets and one and the same pupil facet.

Measurement illumination optical unit for guiding illumination light into an object field of a projection exposure system for EUV lithography

An optical system includes an illumination optical unit configured to guide illumination radiation along a path to an object plane. The illumination optical unit includes comprising a first facet mirror; a second facet mirror disposed downstream of the first facet mirror along the path; and a condenser mirror. The optical system also includes a projection optical unit configured to image a first article in the object plane onto a second article in an image plane. The image plane is a first distance from the object plane. The condenser mirror a second distance from the object plane. The second distance is greater than the first distance

Pupil facet mirror, optical system and illumination optics for a projection lithography system

A facet mirror for EUV projection lithography has a plurality of facets for reflecting EUV illumination light. At least some of the facets are in the form of alignment facets and have a reflection surface, the edge contour of which is aligned along two alignment coordinates of an overall facet arrangement. The reflection surface of at least one of the alignment facets has a surface shape that exhibits different curvatures along two axes of curvature. The axes of curvature are tilted about a finite axis tilt angle relative to the alignment coordinates of the overall facet arrangement. The result is a facet mirror with increased EUV throughput, particularly for prolonged operation of a projection exposure apparatus that is equipped therewith.

Faceted mirror for EUV projection lithography and illumination optical unit with same

An illumination optical unit for EUV projection lithography illuminates an object field with illumination light. The illumination optical unit has a first facet mirror including a plurality of first facets on a first mirror carrier. Disposed downstream of the first facet mirror is a second facet mirror including a plurality of second facets arranged on a second mirror carrier around a facet arrangement center. Partial beams of the illumination light are guided superposed on one another into the object field, respectively via illumination channels which have one of the first facets and one of the second facets. Second maximum angle facets are arranged at the edge of the second mirror carrier. The second maximum angle facets predetermine maximum illumination angles of the illumination light which deviate maximally from a chief ray incidence on the object field.

Illumination optic for EUV projection lithography

An illumination optical unit for EUV projection lithography includes a field facet mirror and a pupil facet mirror. A correction control device, which is used for the controlled displacement of at least some field facets that are usable as correction field facets, which are signal connected to displacement actuators, is embodied so that a correction displacement path for the correction field facets is so large that a respective correction illumination channel is cut off at the margin by the correction pupil facet so that the illumination light partial beam is not transferred in the entirety thereof from the correction pupil facet into the object field.

Illumination optics for EUV projection lithography

An illumination optical unit for EUV projection lithography has a first and second facet mirrors, each with a plurality of reflecting facets on a support. The facets of the first facet mirror can be switched between various tilt positions. In each tilt position, the tiltable first facet is assigned to a second facet of the second facet mirror for deflecting EUV radiation in the direction of this second facet. Each of the first facets is assigned to a set of second facets by its tilt positions. The two facet mirrors are arranged so that an arrangement distribution of second facets, impinged upon via the first facets, results in an illumination-angle distribution of an illumination of an illumination field.

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Aalen, Germany

Thomas Fischer