Genus, Inc.

Other

Sematech, Inc.

Lucent Technologies Inc.

Aixtron, Inc.

Eugenus, Inc.

Thomas E Seidel

Carl J Galewski

Ana R Londergan

Ofer Sneh

Prasad N Gadgil

Bin Zhao

Prahalad K Vasudev

Kenneth Brian Doering

Michael I Current

Sasangan Ramanathan

Lawrence D Matthysse

Ronald S Horwath

Peter M Zeitzoff

Ed C Lee

Ana Rangelova Londergan

Xinye Liu

Gi Youl Kim

Hector Velasco

Ken Doering

Claude A Sands

Jereld Winkler

Jurek Puchacz

Adrian Jansz

Anuranjan Srivastava

V Reddy Manukonda

Edward Lee

Structures and associated methods for making smaller physical feature sizes for masks used in imprint lithography for application to patterning for advanced semiconductor and data storage devices.

Method and structure for nanoimprint lithography masks using optical film coatings

Processes for the localized etching of films on the sidewalls of non-planar 3D features such as a trench or a FinFET array. The etch process has a first step of an angle-directed ion implant beam, with the beam being self-aligned onto a localized region on a sidewall feature, that functionalizes the region for a second step that etches the ion implanted region.

Limited dose and angle directed beam assisted ALE and ALD processes for localized coatings on non-planar surfaces

Processes for localized film deposition on semiconductor device surfaces having non-planar features. The processes use combinations of Limited-Dose Atomic Layer Etch, Limited Dose Atomic Layer Deposition, and Atomic Layer Deposition to provide localized coatings only near or on the bottom, or only near the center, or only near or on the top and bottom of trench and Fin features.

Limited dose atomic layer processes for localizing coatings on non-planar surfaces

Structures and associated methods for making high index of refraction surface coatings for masks used in imprint lithography for application to patterning for advanced semiconductor and data storage devices.

A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uniform film deposition. The second chemically reactive precursor dose may likewise be insufficient to result in a maximum saturated ALD deposition rate on the wafer or, alternatively, sufficient to result in a starved saturating deposition on the wafer. The process may or may not include purges between the precursor exposures, or between one set of exposures and not another.

Transient enhanced atomic layer deposition

A composite film comprised of three layers is formed by ALD on a substrate with a substrate interface surface. A first layer is coupled to the substrate interface surface. The first layer provides adhesion to the substrate interface surface and initiation of layer by layer ALD growth. A second layer is positioned between the first and third layers and provides a conducting diffusion barrier between the substrate and subsequent overlaying film. A third layer has a surface that is configured to provide adhesion and a texture template in preparation for a subsequent overlaying film. The composite engineered barrier structures are applied to interconnect, capacitor and transistor applications.

Methods and procedures for engineering of composite conductive films by atomic layer deposition

Methods and procedures for engineering of composite conductive by atomic layer deposition

An apparatus with a processing chamber subjects a substrate to atomic layer deposition and deposits a film layer. The processing chamber includes at least a first gas switching port. A gas switching manifold is coupled to the processing chamber and configured to mix reactants with a neutral carrier gas and provide gas switching functionality for ALD processes. An upstream gas source and pressure setting apparatus is coupled to the gas switching manifold. The upstream gas source and pressure setting apparatus includes at least a first reactant source, a second reactant source and a neutral gas source. Additionally, the upstream gas source and pressure setting apparatus is configured to provide a cascade of continuing, decreasing pressures.

Method and apparatus for flexible atomic layer deposition

A method and apparatus for the use of individual vertically stacked ALD or CVD reactors. Individual reactors are independently operable and maintainable. The gas inlet and output are vertically configured with respect to the reactor chamber for generally axi-symmetric process control. The chamber design is modular in which cover and base plates forming the reactor have improved flow design.

Massively parallel atomic layer deposition/chemical vapor deposition system

A method and apparatus for performing atomic layer deposition in which a surface of a substrate is pretreated to make the surface of the substrate reactive for performing atomic layer deposition.

Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition

A method to deposit a passivating layer of a first material on an interior reactor surface of a cold or warm wall reactor, in which the first material is non-reactive with one or more precursor used to form a second materials. Subsequently when a film layer is deposited on a substrate by subjecting the substrate to the one or more precursors, in which at least one precursor has a low vapor pressure, uniformity and repeatability is improved by the passivation layer.

Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition

Improvements to chemical vapor deposition processes are taught for depositing tungsten nitride in semiconductor manufacturing processes. In one irmproved process NF is used as a source of nitrogen, and a plasma is introduced under controlled conditions to control particle formation and lower the temperature at which acceptable films may be produced. In another set of processes substantially pure tungsten is produced by rapid thermal annealing of substantially amorphous tungsten nitride at temperatures lower than achieved in the art, by using hydrogen in the ambient atmosphere. In yet another set of new processes particle formation and step coverage enhancement when using NH as a nitrogen source is controlled by limiting the pressure at which source gases mix, by unique wall coating technique, and by controlling chamber wall temperature. In still another set of unique processes a graded film on oxide, starting with tungsten silicide quickly grading to tungsten nitride is produced by introducing silane in the NH chemistry under controlled conditions.

PECVD and CVD processes for WNx deposition

A method and apparatus for fabricating a metal-insulator-metal capacitor by performing atomic layer deposition (ALD). A fully integrated process flow prevents electrode-dielectric contamination during an essential ex situ bottom electrode patterning step.

Growing community of inventors

Sunnyvale, CA, United States of America

Thomas E Seidel