Intel Corporation

Thomas Christopher Hoff

Charles Henry Wallace

Manish Chandhok

Florian Gstrein

Paul Anton Nyhus

Eungnak Han

Nafees Kabir

David N Shykind

Gurpreet Singh

Nityan Labros Nair

Brandon Jay Holybee

Xuanxuan Chen

Described herein are IC devices include patterned conductive layers, such as metal gratings and gate layers, and patterned layers formed over the patterned conductive layers using a directed self-assembly (DSA)-enabled process with DSA assisting features. A patterned conductive layer may have non-uniform features, such as large regions of insulator within a metal grating, or varying gate lengths across a gate layer. The DSA assisting features enable the formation of patterned layers, e.g., layers with different hard mask materials replicating the structure of the conductive layer below, even over non-uniform features.

Directed self-assembly enabled patterning over metal layers using assisting features

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Hillsboro, OR, United States of America

Thomas Christopher Hoff