International Business Machines Corporation

Thomas Benjamin Faure

Scott Alan Estes

Wilbur David Pricer

Thomas M Wagner

Bernard S Meyerson

Kurt R Kimmel

James P Levin

Virginia Chi-Chuen Chao

Timothy Joseph Dalton

Howard Smith Landis

Harold G Linde

Cuc Kim Huynh

Alfred Wagner

Michelle Leigh Steen

Charles Arthur Whiting

Jeanne-Tania Sucharitaves

Steven C Nash

Shaun Crawford

Steven D Flanders

Douglas E Benoit

Peter H Bartlau

Robin J Ackel

Michael H Charland

Cecilia C Smolinski

Jeffrey F Shepard

Timothy Dooling Sullivan

Supratik Guha

Marie Angelopoulos

Edward William Kiewra

Timothy A Brunner

James Gardner Ryan

Robert L Sandstrom

Ari Aviram

Ranee W Kwong

Karen Elizabeth Petrillo

Edward D Babich

C Richard Guarnieri

Louis M Kindt

Joseph L Malenfant, Jr

William J Nestork

Wilber D Pricer

John R Turnbull, Jr

Lyndon S Gibbs

The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic Layered Deposition (ALD) AlOon a photomask, subjecting said film of AlOon the photomask to a plasma treatment and then irradiating the deposited film of ALD AlOon the coated photomask at a wavelength of 193 nm.

Protection of photomasks from 193nm radiation damage using thin coatings of ALD Al2O3

A photomask includes a light transmitting substrate and an absorber layer adjacent thereto. The absorber layer includes a silicide, such as molybdenum silicide, patterned into a plurality of features. The surrounding environment is controlled to prevent undesirable growth by oxidation of the absorber layer when the mask is exposed to light while being used to fabricate integrated circuits. In another aspect, the surrounding environment is controlled to encourage desirable growth by oxidation of the absorber layer when the mask is exposed to light.

Techniques for reducing degradation and/or modifying feature size of photomasks

A design structure, method, and system for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks, or with other two-mask lithographic processes employing a trim mask. A design structure is embodied in a machine readable medium used in a design process, the design structure comprising regions in a finished semiconductor design that do not contain as-designed shapes. The design structure additionally includes dummy fill shapes in the regions at a predetermined final density, wherein the generated dummy shapes are sized so that their local density is increased to a predetermined value. Moreover, corresponding trim shapes act to expose an oversized portion of the dummy shape, effectively trimming each dummy shape back to the predetermined final density.

Structure for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks

Methods for manufacturing a photomask, such as a chrome on glass photomask and a phase shift photomask are provided. A selective main chrome etch and a selective chrome overetch in the fabrication process provides a photomask having improved image quality and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing steps. The selective etch process utilizes a main etch where the resist etch selectivity (amount of chrome removed to resist removed) is higher than in the overetch step in which the etch is more selective to removal of the resist layer relative to the chrome layer. To control the etch selectivities the composition of the etchant chemistry and/or the etchant reactor hardware settings (power, voltage, etc.) can be adjusted.

Method to etch chrome for photomask fabrication

A method and system for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks, or with other two-mask lithographic processes employing a trim mask. The method and system comprises locating regions in a finished semiconductor design that do not contain as-designed shapes. The method and system generates dummy fill shapes in the regions at a predetermined final density and sizes the generated dummy shapes so that their local density is increased to a predetermined value. The method and system further creates corresponding trim shapes that act to expose an oversized portion of the dummy shape, effectively trimming each dummy shape back to the predetermined final density. The method and system can be implemented on a computer program product comprising a computer useable medium including a computer readable program.

Structure and method for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks

A photomask is formed by depositing an opaque layer on a transparent substrate. A resist is formed on the opaque layer and selectively patterned to expose the portions of the opaque layer that are to be etched out. During the dry etching step, the photomask is exposed to an etchant gas mixture which exhibits a selectivity equal to or higher than 1.2:1 between the opaque layer and the resist layer. Due to the selectivity of the gas mixture, a thinner resist film can be used, thereby increasing resolution and accuracy of the opaque layer pattern. Also, due to reduced susceptibility to both a macro-loading effect and a pattern density effect, overetching of the resist and underetching of the opaque layer are significantly reduced, thereby achieving improved etching uniformity and consequently improved CD uniformity.

CD uniformity of chrome etch to photomask process

A photomask is formed by depositing an opaque layer on a transparent substrate. A resist is formed on the opaque layer and selectively patterned to expose the portions of the opaque layer that are to be etched out. During the dry etching step, the photomask is exposed to an etchant gas mixture which exhibit a selectivity equal to or higher than 1.2:1 between the opaque layer and the resist layer. Due to the higher selectivity of the gas mixture, a thinner resist film can be used, thereby increasing resolution and accuracy of the opaque layer pattern. Also, due to reduced susceptibility to both a macro-loading effect and a pattern density effect, overetching of the resist and underetching of the opaque layer are significantly reduced, thereby achieving improved etching uniformity and consequently improved CD uniformity.

Method for dry etching photomask material

A method for forming for inhibiting the buildup of cerlum-containing deposits in a process tool is disclosed. The method involves spraying a solution of a dilute acid, preferably nitric or perchloric acid, through the chamber and bowl rinse nozzles of the process tool. The method is less time consuming than previous methods for inhibiting the buildup of cerium-containing deposits and can be conveniently carried out at the end of every shift.

Method of inhibiting contaminants using dilute acid rinse

A method for removing contaminants from a substrate surface having a pattern formed on the surface. The method involves rinsing the substrate and pattern with water to remove acid reactive material. The substrate and pattern are then washed with an acid whose concentration is too low to attack the material that forms the pattern. Then the substrate is washed with water to remove the acid.

Method of minimizing contaminating deposits using dilute acid rinse

The reactive ion etching resistance of radiation sensitive resist composition is enhanced by adding at least one organometallic compound to a radiation sensitive polymer. The resist composition can be patterned and used as mask for patterning an underlying layer.

Plasma resistant composition and use thereof

A method for developing copolymer photosensitive resists wherein a single solvent is used in conjunction with a puddle develop tool. The copolymer resist is ZEP 7000 and the developer is ethyl 3-ethoxy propionate (EEP).

Single component developer for use with ghost exposure

A method and apparatus are provided for the electroplating on only one side of a substrate immersed in an electroplating bath using a device which holds the substrate to be plated in spaced relation to an inhibitor electrode of the device. To fabricate x-ray masks, a boron doped silicon substrate is secured to a dielectric clamp ring which clamp ring has a through opening which overlies the inhibitor electrode. A cathode structure overlies the clamp ring and the cathode structure, substrate and clamp ring are secured to the device by a pivotable, locking mechanism. A space is formed between the back side of the substrate and the surface of the inhibitor electrode so plating occurs on the surface of the inhibitor electrode. The substrate holding apparatus comprises a plate member to which the inhibitor electrode is secured. The clamp holding the substrate overlies the inhibitor electrode and a cathode structure is secured against the plate member.

Plating cell apparatus for x-ray mask fabrication

Single component developer for copolymer resists

A method for forming chrome photomasks and phase-shift masks without producing chrome opaque defects. The method involves rinsing the mask blank with dilute acid, preferably nitric or perchloric acid, during processing to form the photomask. When a dry etch is used to form the photomask, the mask blank is rinsed after wet development of the photoresist. When a wet etch is used to form the photomask, the mask blank is rinsed after the wet etch. This method decreases the number of defects per photomask as well as the mask-to-mask variation in the number of defects.

Dilute acid rinse after develop for chrome etch

A method and apparatus are provided for the electroplating on only one side of a substrate immersed in an electroplating bath comprising using a specially designed device which holds the substrate to be plated in spaced relation to an inhibitor electrode which is part of the device. To fabricate x-ray masks, a boron doped silicon substrate is secured to a dielectric clamp which clamp has a through opening which is positioned to overlie the inhibitor electrode. A cathode structure overlies the clamp and the cathode structure, substrate and clamp are secured to the device by preferably a pivotable, locking mechanism. A space is formed between the back side of the substrate and the surface of the inhibitor electrode so that plating is preferentially on the surface of the inhibitor electrode. The use of the method and apparatus minimizes plating on the backside of the substrate and provides a plated substrate on only the upper side of the substrate. The apparatus for holding the substrate comprises a plate member to which the inhibitor electrode is secured. The clamp holding the substrate is positioned overlying the inhibitor electrode and a cathode structure is secured against the plate member of the device and the assembled device is inserted in the electroplating bath for plating.

Plating process for x-ray mask fabrication

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Milton, VT, United States of America

Thomas Benjamin Faure