Lam Research Corporation

Thomas A Kamp

Alan Jeffrey Miller

Harmeet Singh

Vahid Vahedi

Saurabh J Ullal

Frank Lin

Chris Lee

Helene Del Puppo

A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.

Method to improve profile control and N/P loading in dual doped gate applications

A semiconductor manufacturing process provides a shallow trench in a silicon layer using a silicon containing etch gas to provide controlled top and/or bottom rounding of the trench or to enhance profile control and/or critical dimension control by controlled deposition across a semiconductor substrate. A gate structure can be etched on a semiconductor substrate using a silicon containing gas to enhance profile control and/or critical dimension control.

Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures

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San Jose, CA, United States of America

Thomas A Kamp