Rohm & Haas Electronic Materials LLC

Thomas A Estelle

Deyan Wang

Cheng-Bai Xu

Cong Liu

George G Barclay

Shintaro Yamada

Gerhard Pohlers

Seung-Hyun Lee

Doris H Kang

Kevin Rowell

Kenneth J Spizuoco

Wenyan Yin

New lithographic processing methods are provided which are particularly useful in immersion lithography schemes. In one aspect, processes of the invention comprise: applying on a substrate a photoresist composition; exposing the photoresist layer to radiation activating for the photoresist composition; removing a portion but not all of the exposed photoresist layer; and developing the treated photoresist layer to provide a photoresist relief image.

Processes for photolithography

Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: Ris chosen from hydrogen, fluorine, C-Calkyl and C-Cfluoroalkyl; Ris chosen from C-Calkylene; and Ris chosen from C-Cfluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

Photoresist pattern trimming compositions and methods

Growing community of inventors

Northborough, MA, United States of America

Thomas A Estelle