Stmicroelectronics S.a.

Fei Efa, Inc.

Thierry Parrassin

Herve Deslandes

Antoine Reverdy

Sylvain Dudit

Guillaume Celi

An apparatus and method for optical probing of a DUT is disclosed. The system enables identifying, localizing and classifying faulty devices within the DUT. A selected area of the DUT is imaged while the DUT is receiving test signals, which may be static or dynamic, i.e., causing certain of the active devices to modulate. Light from the DUT is collected and is passed through a transparent diffracting grating prior to imaging it by a sensor and converting it into an electrical signal. The resulting image includes the zero order and first order diffraction of the grating. The grating is configured such that the zero order is in registration with emission sites imaged when the grating is outside the optical path.

Spectral mapping of photo emission

A method can be used for detecting defects in an electronic integrated circuit that includes a power input and a data input. The electronic integrated circuit is powered with a periodic power signal having a frequency and an input signal is applied to the data input. A surface of the electronic integrated circuit is swept with a laser beam. A first image is generated using a laser beam reflected from the surface and a second image is generated using a selected part of the laser beam reflected from the surface. The selected part of the reflected laser beam has a frequency that corresponds to the frequency of the power signal. Defects in the integrated circuit can be detected by superposing the first image and the second image.

Defect detection by thermal frequency imaging

A buried oxide layer of an SOI substrate beneath a structure electrically isolated from the rest of a semiconductor device is made to break down so as to open a bias path for the substrate through the structure. It then suffices to connect the electrical ground of the semiconductor device to this bias path so that the ions flow away into the substrate during a focused ion beam treatment of the semiconductor device.

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Grenoble, France

Thierry Parrassin