Plasma-therm, Inc.

Thierry Lazerand

Gordon M Grivna

Russell Westerman

Linnell Martinez

David Pays-Volard

Rich Gauldin

Jason Michael Doub

Dwarakanath Geerpuram

Ken Mackenzie

Chris Johnson

The present invention provides a method for plasma processing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing at least two cutting regions on the substrate, the cutting regions being positioned between all adjacent device structures on the substrate; generating a plasma using the plasma source; and processing the work piece using the generated plasma.

Method and apparatus for plasma dicing a semi-conductor wafer

The present invention provides a method for plasma dicing a substrate. The method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a carrier support to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

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St. Petersburg, FL, United States of America

Thierry Lazerand