Applied Materials, Inc.

Thian Choi Lim

Jeffrey Drue David

Ganesh Balasubramanian

Deenesh Padhi

Harry Q Lee

Yue Chen

Xinhai Han

Zhijun Jiang

Daemian Raj Benjamin Raj

Hidehiro Kojiri

Nikhil Sudhindrarao Jorapur

Vu Ngoc Tran Nguyen

Chuan Ying Wang

Arkajit Roy Barman

Gary Ka Ho Lam

Miguel S Fung

Jose Angelo Olave

A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.

Method of forming film stacks with reduced defects

A method of controlling polishing includes polishing a substrate having a second layer overlying a first layer, detecting exposure of the first layer with an in-situ monitoring system, receiving an identification of a selected spectral feature and a characteristic of the selected spectral feature to monitor during polishing, measuring a sequence of spectra of light from the substrate while the substrate is being polished, determining a first value for the characteristic of the feature at the time that the first in-situ monitoring technique detects exposure of the first layer, adding an offset to the first value to generate a second value, and monitoring the characteristic of the feature and halting polishing when the characteristic of the feature is determined to reach the second value.

Adaptively tracking spectrum features for endpoint detection

Growing community of inventors

Singapore, Singapore

Thian Choi Lim