Other

Tetsuyuki Itakura

Yasuaki Tsuchiya

Tomoko Wake

Kenichi Aoyagi

Shin Sakurai

Masao Yamaguchi

Masahiro Sasaki

Yasutoshi Fujita

Kazuya Orii

This invention provides a chemical mechanical polishing slurry for polishing a copper-based metal film formed on an insulating film comprising a concave on a substrate, comprising a polishing material, an oxidizing agent and water as well as a benzotriazole compound and a triazole compound. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing.

Chemical mechanical polishing slurry

By using a polishing slurry which contains, at least, a polishing grain, an oxidizing agent and a basic amino acid compound, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

Slurry for chemical mechanical polishing

This invention provides a chemical mechanical polishing slurry for polishing a metal film formed on an insulating film with a concave on a substrate wherein the slurry contains a thickener without an ionic group with an opposite sign to a charge on a polishing material surface to 0.001 wt % or more and less than 0.05 wt % to the total amount of the slurry and has a slurry viscosity of 1 mPa&middot;s to 5 mPa&middot;s both inclusive. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing or erosion.

By using a polishing slurry which comprises, at least, a polishing grain, an oxidizing agent and a higher-mono-primary amine, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

This invention relates to free abrasive slurries suited for use in polishing workpieces composed of materials varying in hardness, uniformly without selective polishing or working without difference in the amounts of polishing for different materials. The subject matter of this invention is a free abrasive slurry composition for polishing workpieces in which at least one soft material with a Vickers hardness in the range of 26 to 360 and at least one hard material with a Vickers hardness in the range of 700 to 4000 are mixedly present, comprising a polyol with a molecular weight ranging from 300 to 20000, a polishing powder, a dispersion medium, and optionally a surfactant.

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Tokyo, Japan

Tetsuyuki Itakura