Tokyo Electron Limited

Tetsuya Ohishi

Song Yun Kang

Takuya Kubo

Keiichi Shimoda

Akitaka Shimizu

Naotsugu Hoshi

Shinji Higashitsutsumi

A plasma processing method includes a substrate processing step of performing predetermined processing on a target substrate loaded into a chamber by using plasma of a hydrogen-containing gas and unloading the processed substrate from the chamber; and an in-chamber processing step of processing surfaces of components in the chamber by plasma of an oxygen-containing gas after the substrate processing step is performed at least once. The substrate processing step is performed again at least once after the in-chamber processing step.

Plasma processing method and plasma processing apparatus

A method of cleaning a substrate processing apparatus that etches a film including a metal includes (a) providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

Method of cleaning a substrate processing apparatus and the substrate processing apparatus performing the method

A method of cleaning a substrate processing apparatus that etches a film including a metal, the method include a first cleaning step of providing a gas containing a hydrogen-containing gas, and removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas; a second cleaning step of, after the first cleaning step, providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and a third cleaning step of, after the second cleaning step, providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

Method of cleaning and method of plasma processing

A method includes: etching a target layer of a target object in a processing chamber by generating a plasma of a first gas containing at least one of SF, ClFand Fsupplied into the processing chamber to; and forming a protective film on the target layer by generating a plasma of a second gas containing at least one of hydrocarbon, fluorocarbon, and fluorohydrocarbon supplied into the processing chamber. In the etching, a pressure in the processing chamber is set to a first pressure and a first bias power is applied to a lower electrode. In the forming, the pressure is set to a second pressure lower than the first pressure and a second bias power higher than the first bias power is applied to the lower electrode.

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Miyagi, Japan

Tetsuya Ohishi