Tokyo Electron Limited

Tokyo Electron Kyushu Limited

Tetsuya Oda

Mitsuhiro Tanoue

Shinichi Hayashi

Hiroaki Inadomi

Tetsuo Fukuoka

Toshichika Takei

Satoru Tanaka

Yoshihiro Kai

Eiichi Shirakawa

Kazuyoshi Shinohara

Meitoku Aibara

Yoshinori Ikeda

Yuki Yoshida

Akihiro Kubo

Hiroyuki Sakai

Kimiharu Matsumura

Masaaki Murakami

Katsuhisa Fujii

Chizo Yamaguchi

A substrate processing apparatus according to the present disclosure includes first and second nozzles that eject a processing liquid to a substrate; a moving mechanism that moves the first and second nozzles; and a nozzle cleaning device that cleans at least the second nozzle. The nozzle cleaning device includes a cleaning bath and an overflow bath. The cleaning bath includes a liquid storage portion that stores a cleaning liquid for cleaning the second nozzle, and an overflow portion that discharges the cleaning liquid exceeding a predetermined level from the liquid storage portion. The overflow bath is disposed adjacent to the cleaning bath and receives the cleaning liquid discharged from the overflow portion and discharge the received cleaning liquid to the outside.

Substrate processing apparatus and nozzle cleaning method

A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal chamber serving as a vacuum insulating layer that suppresses heat transfer from a first surface of the top plate facing the hot plate to a second surface of the top plate opposite to the first surface. When heating the substrate, a gas flow flowing through the space between the hot plate and the top plate is generated.

Apparatus and method for heating substrate and coating and developing system

In a heat treatment method in which a semiconductor wafer is carried into a heat treatment chamber constituted of a heat plate and a cover body covering the heat plate and processed, until the wafer is carried into the heat treatment chamber, an opening and closing operation of the cover body is performed to maintain the accumulated heat temperature of the heat treatment chamber at a prescribed processing temperature.

Heat treatment apparatus, heat treatment method, and recording medium recording program for practicing the method

A heat treatment unit comprises a heat plate made of aluminum nitride which is excellent in heat conductivity and strength inside thereof. The entire circumference of the heat plate is supported by a supporting member which is excellent in thermal insulation. The heat treatment unit is equipped with a nozzle for blowing dry air against the reverse side of the heat plate. When a temperature of the heat plate is lowered, the dry air is blown from the nozzle, thereby quickly lowering the temperature of the heat plate.

Heat treatment unit and heat treatment method

In a heat processing apparatus structured to heat a wafer on a hot plate, a black plate at least the rear face of which practically has a color with a JIS lightness of 0V to 4V is positioned above the hot plate. Moreover, cooling air is blown out from nozzles onto the rear face of the hot plate. Thus, the temperature of the hot plate can be cooled rapidly.

Hot plate cooling method and heat processing apparatus

In a heat processing apparatus for heating a wafer on a hot plate, a black plate having at least a rear face practically having a color with a JIS lightness of 0V to 4V is positioned above the hot plate. Moreover, cooling air is blown out from nozzles onto the rear face of the hot plate so that the temperature of the hot plate can be cooled rapidly.

CPU stores information showing a time-temperature relationship and applicable for either heating a semiconductor wafer to a hold temperature for a predetermined period of time or cooling the wafer from the hold temperature over a predetermined period of time, or for both, read the information. A conductive thin film heats the wafer in accordance with the information. A sensor detects the temperature of the wafer. A control system controls either the heating of the wafer or the cooling thereof, or both, in accordance with the detected temperature signal and the information.

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Kumamoto, Japan

Tetsuya Oda