Tokyo Electron Limited

Tetsuya Miyashita

Naoki Watanabe

Naoyuki Suzuki

Tatsuo Hatano

Masamichi Hara

Shinji Furukawa

Masato Shinada

Koji Maeda

Atsushi Gomi

Einstein Noel Abarra

Hiroaki Chihaya

Hiroshi Miki

Yasuhiko Kojima

Kaoru Yamamoto

Toshiharu Hirata

Kanto Nakamura

Junichi Takei

Kouji Maeda

Tadashi Mitsunaga

Hiroyuki Toshima

Hiroshi Sone

Hiroyuki Yokohara

Atsushi Shimada

Toru Kitada

Takuya Umise

Tomohiro Saito

Yusuke Kikuchi

Katsushi Oikawa

A substrate processing apparatus includes: a stage having an electrostatic chuck configured to attract a substrate; a measurement part configured to measure a temperature of the stage; and a detection part configured to detect an abnormality caused by attraction of the substrate by the electrostatic chuck, based on a fluctuation of the temperature of the stage.

Substrate processing apparatus and abnormality detection method

A substrate transfer device, includes: a first planar motor installed in a first chamber and having an array of coils; a second planar motor installed in a second chamber connected to the first chamber and having an array of coils; a pair of transfer units configured to move on at least one of the first planar motor and the second planar motor and configured to transfer a substrate; and a controller configured to control supply of electric current to the coils of the first planar motor and the second planar motor.

Substrate transfer device and substrate processing system

A processing method for processing a substrate includes: a first arrangement step of mounting, on a stage provided in a processing container to mount the substrate on the stage, a plate-shaped protective member which is prepared in advance at a location in the processing container different from a location on the stage and which is configured to protect an upper surface of the stage; an adjustment step of adjusting a distance between the stage and an annular cover member provided above an edge portion of the stage to a second distance different from a first distance between the stage and the cover member when the substrate is processed; and a pretreatment step of performing a pretreatment in the processing container to change a state in the processing container to a predetermined state, wherein the protective member has a thickness different from a thickness of the substrate.

Processing method and processing apparatus

A vacuum transfer device configured to transfer a substrate in a vacuum includes: a flat motor including a body, a plurality of electromagnetic coils arrayed in the body, and a current controller that controls a current supplied to the electromagnetic coil; a transfer unit including a substrate holder configured to hold a substrate, and a base having a plurality of magnets arrayed therein and magnetically levitating from a surface of the body by a magnetic field generated by the electromagnetic coil, and move in a magnetically levitating state thereby moving the substrate holder; and a temperature controller configured to adjust temperature of at least a portion of the body. The temperature of the transfer unit is adjusted by stopping the magnetic levitation of the base by controlling the current supplied to the electromagnetic coil, and bringing the base into contact with a temperature-adjusted portion of the body.

Vacuum transfer device, substrate processing system, and substrate processing method

A substrate processing apparatus includes: a stage including an electrostatic chuck configured to attract a substrate; a heater configured to heat the stage; a heating drive part configured to supply power to the heater so that a temperature of the stage becomes a target value; and a detector configured to detect an abnormality in attraction of the substrate by the electrostatic chuck, wherein the detector is further configured to detect the abnormality based on fluctuation of the power supplied to the heater, the fluctuation being generated by the attraction of the substrate by the electrostatic chuck.

A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.

Film forming apparatus and film forming method

A substrate transfer apparatus includes a planar motor provided in a transfer chamber and having coils arranged therein, a transfer unit movable on the planar motor, and a control unit configured to control an energization of the coils. The transfer unit includes two bases having magnets arranged thereon and configured to be movable on the planar motor, a substrate support member configured to support a substrate, and a link mechanism configured to connect the two bases and the substrate support member to each other.

Substrate transfer apparatus and substrate processing system

There is provided a sputtering apparatus comprising: a target from which sputtered particles are emitted; a substrate support configured to support a substrate; a substrate moving mechanism configured to move the substrate in one direction; and a shielding member disposed between the target and the substrate support and having an opening through which the sputtered particles pass. The shielding member includes a first shielding member and a second shielding member disposed in a vertical direction.

Sputtering apparatus and method of controlling sputtering apparatus

A magnetron sputtering apparatus is provided. The apparatus comprises: a vacuum chamber storing a substrate; a plurality of sputtering mechanisms, each including a target having one surface facing the inside of the vacuum chamber, a magnet array, and a moving mechanism for reciprocating the magnet array between a first position and a second position on the other surface of the target; a power supply for forming plasma by supplying power to targets of selected sputtering mechanisms for film formation; a gas supplier for supplying a gas for plasma formation into the vacuum chamber; and a controller for outputting a control signal, in performing the film formation, such that magnet arrays of selected and unselected sputtering mechanisms, extension lines of moving paths of the magnet arrays thereof intersecting each other in plan view, move synchronously or are located at certain positions so as to be distinct from each other.

Magnetron sputtering apparatus and magnetron sputtering method

There is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.

Film formation apparatus and film formation method

The substrate transfer apparatus includes a planar motor provided in a transfer chamber and having coils arranged therein; a transfer unit movable on the planar motor; and a control unit configured to control an energization of the coils. The transfer unit includes two bases having magnets arranged thereon and configured to be movable on the planar motor, a substrate support member configured to support a substrate, and a link mechanism configured to connect the two bases and the substrate support member to each other.

A film forming system comprises a chamber, a stage, a holder, a cathode magnet, a shield, a first moving mechanism, and a second moving mechanism. The chamber provides a processing space. The stage is provided in the processing space and configured to support a substrate. The holder is configured to hold a target that is provided in the processing space. The cathode magnet is provided outside the chamber with respect to the target. The shield has a slit and is configured to block particles released from the target around the slit. The first moving mechanism is configured to move the shield between the stage and the target along a scanning direction substantially parallel to a surface of the substrate mounted on the stage. The second moving mechanism is configured to move the cathode magnet along the scanning direction.

Film forming system and method for forming film on substrate

A film-forming device according to one embodiment includes a chamber body, a support, a moving device, a shielding member, a first holder and a second holder, in the film-forming device, a substrate supported by the support is linearly moved. The shielding member is disposed above an area where the substrate is moved, and includes a slit extending in a direction perpendicular to a movement direction of the substrate. The first holder and the second holder hold a first target and a second target, respectively, above the shielding member. The first target and the second target are arranged symmetrically with respect to a vertical plane including a linear path on which the center of the substrate is moved.

Film-forming device

Disclosed is a PVD processing method including a first process, a second process, a third process, and a fourth process. In the first process, an opening of a shield, which is provided between a first target containing a metal oxide and a second target containing a metal constituting the metal oxide, and a stage on which a substrate as a film formation object is placed, is made to coincide with the first target so as to expose the first target to the stage and the opening is brought close to the first target. In the second process, sputtering is performed using the first target. In the third process, the opening is made to coincide with the second target so as to expose the first target to the stage, and the opening is brought close to the second target. In the fourth process, sputtering is performed using the second target.

PVD processing method and PVD processing apparatus

An apparatus includes a row of substrate transfer deviceswhich can deliver a wafer W within a transfer chamber; and rows of process modules PM, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer W. The rows of the process modules PM are arranged such that each of the processes can be performed by at least two process modules PM. Thus, when a single process module PM cannot be used, the wafer W can be rapidly transferred to another process module PM which can perform the same process as performed in the corresponding process module. Therefore, even when the single process module PM cannot be used, the processes can be continued to the wafers W without stopping an operation of the apparatus, so that the number of wasted wafers W can be reduced.

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Nirasaki, Japan

Tetsuya Miyashita