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Mitsubishi Gas Chemical Company, Inc.

Tetsuya Karita

Tetsuo Aoyama

Taketo Maruyama

Hisaki Abe

Taimi Oketani

Kojiro Abe

Keiichi Iwata

Ryuji Sotoaka

Takayuki Niuya

Hideto Gotoh

Masahiro Nohara

Yukihiko Takeuchi

Tsuyoshi Matsui

Fukusaburou Ishihara

A resist film removing composition used in the manufacture of a thin film circuit element having an organic insulation film which comprises 50 to 70% by weight of an alkanolamine having 3 or more carbon atoms, 20 to 30% by weight of a water-miscible solvent and 10 to 20% by weight of water. The resist film removing composition can easily remove a resist film remaining after etching, without swelling the organic insulation film.

Resist film removing composition and method for manufacturing thin film circuit element using the composition

A resist removing composition comprising a quaternary ammonium hydroxide, a water-soluble amine, an alkylpyrrolidone and a sugar or sugar alcohol. The photoresist removing composition can easily remove (i) a photoresist layer applied onto an inorganic substrate, (ii) a remaining photoresist layer after dry etching or (iii) a photoresist residue after ashing, at a low temperature in a short time, and also enables hyperfine processing of a wiring pattern material to manufacture a high precision circuit pattern without corroding the material.

Photoresist removing composition

A cleaning agent for use in producing semiconductor devices. The cleaning agent is an aqueous solution containing (A) a fluorine-containing compound, (B) a salt of boric acid, (C) a water-soluble organic solvent, and optionally, (D) a specific quaternary ammonium salt or (D&prime;) a specific ammonium salt of an organic carboxylic acid or a specific amine salt of an organic carboxylic acid. The polymeric deposit inside and around the via holes and on the side wall of the conductive line pattern formed during the dry etching process can be effectively removed by using the cleaning agent without affecting the dimensions of the via holes and the conductive line pattern.

Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same

A removing agent composition for a photoresist comprising 0.01 to 20% by weight of a quaternary ammonium hydroxide, 1 to 80% by weight of a nucleophilic amine having an oxidation-reduction potential, 0.5 to 20% by weight of a sugar and/or a sugar alcohol, and water in the remaining amount; and a process for producing a semiconductor integrated circuit comprising removing a photoresist applied onto an inorganic substrate by using the above removing agent composition. A layer of a photoresist applied onto an inorganic substrate, a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer, or residues of a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer and subsequent ashing of the layer can easily be removed at a low temperature in a short time. The wiring material of the circuit is not corroded at all, and ultra-fine working can be performed.

Removing agent composition for a photoresist and process for producing a

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Niigata-ken, Japan

Tetsuya Karita