Applied Materials, Inc.

Sokudo Co., Ltd.

Apple Inc.

Other

Tetsuya Ishikawa

Jay D Pinson, Ii

David H Quach

Fred Conrad Redeker

Michael S Barnes

Farhad K Moghadam

Brian C Lue

Michael Robert Rice

Shijian Li

Lily L Pang

Shin-Puu Jeng

Yung-Cheng Lu

David Wingto Cheung

Wai-Fan Yau

Robert Parkash Mandal

John R Trow

Rick J Roberts

Tze Wing Poon

Ralf B Willecke

Kenneth S Collins

Jeffrey C Hudgens

Harald Herchen

Jeffrey S Marks

Craig A Roderick

Leon Volfovski

Mohsen Salek

Robert B Lowrance

William Tyler Weaver

Charles T Carlson

Chongyang Wang

Helen R Armer

Hiroji Hanawa

David Walter Groechel

Masato M Toshima

Yuriy Melnik

Olga Kryliouk

Yaxin Wang

Chan-Lon Yang

Peter R Keswick

Yan Ye

Daniel John Hoffman

Son Truong Nguyen

Shawn W Snyder

Anzhong Chang

Kartik Ramaswamy

Andrew Nguyen

Liang-Yuh Chen

Kartik Bhupendra Shah

Gerald Z Yin

Tom K Cho

Nicolas J Bright

Swaminathan T Srinivasan

Padmanabhan Krishnaraj

Ala Moradian

Peter Reimer

Jerry Yuen Wong

Semyon L Kats

Wing Lau Cheng

Michael P Karazim

Matthias Bauer

Errol Antonio C Sanchez

Alexandros T Demos

Quanyuan Shang

Karl M Brown

Tsutomu Tanaka

Lawrence C Lei

Robert Z Bachrach

Bernd J Neudecker

Matthew L Miller

Seon-Mee Cho

Donald J K Olgado

Jian Ding

Zhengquan Tan

Robert J Steger

DongQing Li

Sudhir R Gondhalekar

Rolf A Guenther

Lu Yang

Michio Aruga

Hooman Bolandi

Dmitry Lubomirsky

Michael Xiaoxuan Yang

Dan Maydan

Alexander N Lerner

Ming Xi

Ananda H Kumar

Ashok K Sinha

Arulkumar P Shanmugasundram

Canfeng Lai

Romuald Nowak

Gerald Zheyao Yin

Sandeep Nijhawan

Turgut Sahin

Brian Hayes Burrows

Anh Ngoc Nguyen

Allen L D'Ambra

Sergio Fukuda Shoji

Evans Yip Lee

Henry Ho

Brad L Mays

Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet

The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

Chamber architecture for epitaxial deposition and advanced epitaxial film applications

The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

Gas injector for epitaxy and CVD chamber

A lithium battery cathode material comprises lithium transition metal-based material selected from lithium transition metal oxides and lithium transition metal phosphates, and crystalline silicon carbide residing at grain boundaries of the lithium transition metal-based material, forming conductive pathways along the grain boundaries, the crystalline silicon carbide being less than 10 wt. % of the cathode material.

Cathode active material with silicon carbide additive

Solid-state battery structures and methods of manufacturing solid-state batteries are disclosed. More particularly, embodiments relate to solid-state batteries having one or more subdivided electrode layers. Other embodiments are also described and claimed.

Devices and methods for reducing battery defects

Solid-state battery structures and methods of manufacturing solid-state batteries, such as thin-film batteries, are disclosed. More particularly, embodiments relate to solid-state batteries having a current collector tab between multiple electrochemical cells each having an electrolyte layer between an anode layer and a cathode layer in a vertical direction. The anode layer, the electrolyte layer, and the cathode layer include respective sidewalls exposed along a cell sidewall, and the cell sidewall has a non-zero, non-vertical slope.

Thin film battery structures having sloped cell sidewalls

Solid-state battery structures and methods of manufacturing solid-state batteries, such as thin-film batteries, are disclosed. More particularly, embodiments relate to solid-state batteries having a current collector tab between multiple electrochemical cells. Other embodiments are also described and claimed.

A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.

Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)

A flywheel based energy storage apparatus includes a housing and a hub-less flywheel mounted within the housing. The hub-less flywheel has a mass which is shifted radially outwards from a central axis of the hub-less flywheel thus increasing the energy density of the apparatus. The flywheel includes an outer axially extending annular surface, an inner axially extending surface and two radially extending side surfaces. The inner axially extending surface has a plurality of magnets aligned to form a rotor. A plurality of coils is supported by the housing and is aligned with the rotor to form a motor/generator. A controller controls the motion of the hub-less flywheel to reduce vibrations and controls electrical power transfer to and from the motor/generator.

Flywheel energy storage device with a hubless ring-shaped rotor

Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

HVPE chamber hardware

Embodiments of the invention generally include a robot assembly comprising a robot operable to position a substrate at one or more points within a plane, and a motion assembly having a motor operable to position the robot in a direction generally parallel to a first direction. The motion assembly comprises a robot support interface having the robot coupled thereto, and one or more walls that form an interior region in which the motor is enclosed. The walls define an elongated opening through which the robot support interface travels, and the motor is operable to move the robot support interface laterally in the elongated opening. The motion assembly further comprises one or more fan assemblies that are in fluid communication with the interior region. The fan assemblies are operable to create a subatmospheric pressure in the interior region thereby causing gas to flow through the elongated opening into the interior region.

Cluster tool architecture for processing a substrate

HVPE precursor source hardware

A method and apparatus for forming an electrochemical layer of a thin film battery is provided. A precursor mixture comprising precursor particles dispersed in a carrying medium is activated in an activation chamber by application of an electric field to ionize at least a portion of the precursor mixture. The activated precursor mixture is then mixed with a combustible gas mixture to add thermal energy to the precursor particles, converting them to nanocrystals, which deposit on a substrate. A second precursor may be blended with the nanocrystals as they deposit on the surface to enhance adhesion and conductivity.

In-situ deposition of battery active lithium materials by plasma spraying

Growing community of inventors

Saratoga, CA, United States of America

Tetsuya Ishikawa