Tokyo Electron Limited

Tetsushi Ozaki

Sanjeev Kaushal

Yuichiro Morozumi

Sukesh Janubhai Patel

Aaron Archer Waterman

Shigeru Nakajima

Koji Akiyama

Akitake Tamura

Tetsuya Shibata

Hirokazu Higashijima

A system and method for autonomously tracing a cause of particle contamination during semiconductor manufacture is provided. A contamination analysis system analyzes tool process logs together with particle contamination data for multiple process runs to determine a relationship between systematic particle contamination levels and one or more tool parameters. This relationship is used to predict expected contamination levels associated with regular usage of the tool, and to identify which tool parameters have the largest impact on expected levels of particle contamination. The contamination analysis system also identifies process logs showing unexpected deviant particle contamination levels that exceed expected contamination levels, and traces the cause of the deviant particle contamination to particular process log parameter events.

Method and apparatus for autonomous identification of particle contamination due to isolated process events and systematic trends

The semiconductor device has a stacked structure in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate, wherein the blocking oxide layer includes a crystalline layer disposed adjacent to the charge trapping layer and an amorphous layer disposed adjacent to the gate electrode.

Semiconductor device and method of manufacturing the same

A method of using a film formation apparatus for a semiconductor process includes processing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is arranged to supply the cleaning gas into the reaction chamber, and set an interior of the reaction chamber at a first temperature and a first pressure. The by-product film mainly contains a high-dielectric-constant material. The cleaning gas contains chlorine without containing fluorine. The first temperature and the first pressure are set to activate chlorine in the cleaning gas.

Film formation apparatus and method of using the same

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Yamanashi, Japan

Tetsushi Ozaki