Megachips Corporation

Other

Crystal Device Corporation

Ricoh Company, Ltd.

Tetsuo Hikawa

Takashi Sawada

Akira Takata

Daisuke Kosaka

Masahiro Shindo

Toshifumi Asakawa

Yukihiro Ukai

Ful-Long Ni

Tom D Yiu

Tom Dang-hsing Yiu

Yoshinori Ueda

Norio Yoshida

Satoru Taji

Masami Nishikawa

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer ( ) of a single-crystalline Si substrate ( ) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer ( ) is converted to such orientation that the (111) plane is upwardly directed. A masking member ( ) is employed as a shielding member to anisotropically etch the substrate ( ) from its bottom surface, thereby forming a V-shaped groove ( ). At this time, the uppermost layer ( ) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

Semiconductor device and method of fabricating the same

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (,) of a single-crystalline Si substrate (,) whose (,) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (,) is converted to such orientation that the (,) plane is upwardly directed. A masking member (,) is employed as a shielding member to anisotropically etch the substrate (,) from its bottom surface, thereby forming a V-shaped groove (,). At this time, the uppermost layer (,) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

Semiconductor device having a single crystal gate electrode and insulation

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (,) of a single-crystalline Si substrate (,) whose (,) plane is upwardly directed is irradiated with Ne atoms currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (,) is converted to such orientation that the (,) plane is upwardly directed. A masking member (,) is employed as a shielding member to anistropically etch the substrate (,) from its bottom surface, thereby forming a V-shaped groove (,). At this time, the uppermost layer (,) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

Field-effect thin-film transistor device

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diaphragm which is made of a single-crystalline material can be easily manufactured through no junction.

Micromachine manufacture using gas beam crystallization

In order to reduce the chip size of a semiconductor device as well as to separate noises between at least two types of pads having different functions, power supply pins and ground pins are provided on opposite edges of a package with input address pins being arranged therebetween and output data pins being arranged outside the same. Control pins and a nonconnected excess pin are arranged in the center. This allows the package to omit wires and reduce chip size.

Semiconductor device

In order to reduce the chip size of a semiconductor device as well as to separate noises between at least two types of pads having different functions, at least one Vcc and at least one Vss are provided on opposite edges of a package (101) so that output pins or I/O pins are arranged therebetween and input pins are arranged outside the same. Non-connected excess pins (NC) are arranged on upper and lower boundaries, for omitting wires and reducing the chip size.

In order to improve the degree of storage data integration, side walls (32) are selectively formed on side surfaces of word lines (22) to serve as masks for changing ON-state current values of memory cells by changing widths or lengths of active regions (24) of the memory cells, thereby forming a plurality of types of memory cells having different electrical properties. Thus, storage data per memory cell is so multivalued that the number of memory cells is reduced.

Growing community of inventors

Kobe, Japan

Tetsuo Hikawa