Hitachi, Ltd.

Hitachi-High-Technologies Corporation

Other

Opnext Japan, Inc.

Tetsunori Kaji

Takashi Fujii

Tatehito Usui

Motohiko Yoshigai

Yoshinao Kawasaki

Katsuya Watanabe

Toshio Masuda

Kazue Takahashi

Toru Otsubo

Seiichi Watanabe

Saburo Kanai

Katsuhiko Mitani

Junichi Tanaka

Ken Yoshioka

Keizo Suzuki

Hideyuki Yamamoto

Shinichi Tachi

Naoyuki Tamura

Masaharu Nishiumi

Shizuaki Kimura

Manabu Edamura

Ryoji Nishio

Kazuo Nojiri

Hiromichi Enami

Yoshifumi Ogawa

Saburou Kanai

Yutaka Kakehi

Mitsuru Suehiro

Ichiro Sasaki

Akitaka Makino

Yoichi Uchimaki

Yuko Egawa

Kouji Nishihata

Tetsuo Ono

Makoto Koizumi

Shoji Ikuhara

Sadayuki Okudaira

Shigeru Nakamoto

Noriaki Yamamoto

Kenji Sato

Katsumi Tokiguchi

Hiroyuki Shichida

Takayoshi Seki

Makoto Nawata

Satoshi Ito

Ken'etsu Yokogawa

Kazutami Tago

Muneo Furuse

Hideshi Fukumoto

Atsushi Sumioka

Kazuaki Ichihashi

Kenji Nakata

Masashi Mizushima

Ryoji Hamasaki

Keiji Tada

Gen Marumoto

Shigeru Shirayone

Isamu Mitomo

Jyunichi Tanaka

Jun'ichi Tanaka

Tatsuo Moroi

Yuzou Ohhirabaru

A plasma processing method using a spectroscopic processing unit which includes separating spectrally plasma radiation emitted from a vacuum process chamber into component spectra, converting the component spectra into a time series of analogue electric signals composed of different wavelength components at a predetermined period, adding together analogue signals of the different wavelength components, converting a plurality of added signals into digital quantities on a predetermined-period basis, digitally adding together the plurality of added and converted signals a plural number of times on a plural-signal basis, determining discriminatively an end point of a predetermined plasma process on the basis of a signal resulting from the digital addition step, and terminating the predetermined plasma process.

Emission spectroscopic processing apparatus and plasma processing method using it

A system including: a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including: a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed; a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed; a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and a unit for determining a processed amount of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.

Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method

A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.

Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.

Method and apparatus for determining endpoint of semiconductor element fabricating process

In an oxide film etching process, a plasma having a suitable ratio of CF, CF, CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall from 10&#xb0; C. and 120&#xb0; C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.

Plasma processing apparatus and a plasma processing method

Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed

Bays. . . are connected to an inter-bay transfer linevia bay stockers. . . , respectively. The bayis, in this embodiment, composed of a single wafer transfer linehaving a looped planar shape and processing equipmentsarranged side by side along the longitudinal transfer direction of the transfer line (direction crossing the transfer direction of inter-bay transfer line). Processing equipmentsare arranged side by side along one side of the transfer line, and the remaining processing equipmentsare arranged side by side along the other side of the transfer line. The processing equipmentsare equipped with transfer robots, respectively. Moreover, processing equipmentsare each equipped with a chamber (not shown) for processing wafers W one by one (single wafer processing chamber).

Method and apparatus for transferring substrate

A method of plasma-processing is provided which includes placing a sample on one of electrodes provided in a vacuum processing chamber and holding the sample onto the electrodes by an electrostatic attracting force. A processing gas is introduced into an environment in which said sample is placed, and the environment is evacuated to a pressure condition for processing said sample. The processing gas is then formed into a plasma under the pressure condition, the sample is processed by the plasma, and a pulse bias voltage having a pulse cycle of 0.1 &#x3bc;m to 10 &#x3bc;m is applied to the sample.

Plasma processing apparatus and plasma processing method

A plasma processing method using a spectroscopic processing unit. The method includes separating spectrally plasma radiation emitted from a vacuum process chamber into component spectra, converting the component spectra into a time series of analogue electric signals composed of different wavelength components at a predetermined period, adding together analogue signals of the different wavelength components, converting a plurality of added signals into digital quantities on a predetermined-period basis, digitally adding together the plurality of added and converted signals a plural number of times on a plural-signal basis, determining discriminatively an end point of a predetermined plasma process on the basis of a signal resulting from the digital addition, and terminating the predetermined plasma process.

Plasma processing method using spectroscopic processing unit

A plasma etching method for etching a sample within an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall, and a heating mechanism proximate to top end of the exchangeable jacket for generating heat which radiates towards an inside of the etching chamber. The plasma etching method further including a step of evacuating the etching chamber by an evacuation system, a step of supplying an etching gas into the etching chamber, a step of generating a plasma for performing etching of the sample in the etching chamber, and a step of conducting a heating operation by the heating mechanism during an initial stage of the step of generating a plasma.

Plasma etching apparatus and plasma etching method

A system and method of manufacturing wafers are provided suitable for a semiconductor manufacturing system and a method thereof capable of shortening the processing period composed of a series of processes applied to objects to be processed, mainly carry out processes and conveyance peace by peace, and which can manufacture even various kings of products. The system is provided with a plurality of processing units each having therein a conveying mechanism, and is provided therein with a conveyer device for conveying the objects to be processed to the processing units. Further, the conveyer device includes loader conveying means which is laid along object transferring ports of the plurality of processing units across the object transferring ports of not less than two of the processing units, and a running robot which runs across not less than two of the object transferring ports, and a transferring robot for transferring the objects to be processed from the running robot to the processing units through the transferring ports, are arranged in the loader means. The loader means is shielded and provided with a purifying device so as to define an atmospheric pressure space conveying path.

System for producing wafers

An emission spectroscopic processing apparatus includes a spectroscope for spectrally separating input light emitted from a process unit into component spectra, a light receiving unit including a series of light receiving elements for detecting light quantities of the component spectra on a wavelength basis, a first signal hold unit for holding sequentially each of detection signals outputted from a subset of adjacent light receiving elements contained in series of light receiving elements during a first period, an adder unit for adding together the detection signals of adjacent light receiving elements of the light receiving unit inclusive of the held detection signals of the subset of adjacent light receiving elements, a second signal hold unit for holding sequentially sum outputs of the adder unit, and a signal processing unit for determining a state of the process unit on the basis of the output of the second signal hold unit.

Emission spectroscopic processing apparatus

Growing community of inventors

Tokuyama, Japan

Tetsunori Kaji