Osaka Titanium Co., Ltd.

Kyushu Electronic Metal Co., Ltd.

Tetsujiro Yoshiharu

Haruo Kamise

A semiconductor wafer on which silicon or the like is epitaxially grown and p-type or n-type impurities are doped and which has at the rear surface except for the peripheral edge portion thereof a blocking film for preventing jumping out of impurities therefrom which causes auto-doping, thereby preventing silicon particles from being produced at the peripheral surface and preventing the semiconductor wafer from being contaminated by the silicon particles during the manufacturing a semiconductor device.

Semiconductor wafer and manufacturing method therefor

A semiconductor wafer on which silicon or the like is epitaxially grown and p-type or n-type impurities are doped and which has at the rear surface except for the peripheral edge portion thereof a blocking film for preventing jumping out of impurities therefrom which causes auto-doping, thereby preventing silicon particles from being produced at the peripheral surface and preventing the semiconductor wafer from being contaminated by the silicon particles during the manufacturing of a semiconductor device.

Growing community of inventors

Amagasaki, Japan

Tetsujiro Yoshiharu