Tokyo Electron Limited

Shin-etsu Chemical Co., Ltd.

Tokyo Electron Limi Ted

Tetsuji Sato

Yoshiyuki Kobayashi

Tsuyoshi Moriya

Takahiro Murakami

Yohei Uchida

Akihiro Yoshimura

Shojiro Yahata

Taira Takase

Masaaki Miyagawa

Shosuke Endoh

Eiichi Sugawara

Masaki Fujimori

Masanobu Honda

Koji Miyata

Hiroshi Tsujimoto

Masahiro Ogasawara

Hidetoshi Hanaoka

Makoto Kobayashi

Shin Matsuura

Junichi Sasaki

Takashi Kitazawa

Ayuta Suzuki

Koichi Kazama

Masato Horiguchi

Yutaka Matsui

Jun Tamura

Shuhei Yamabe

Nobuhiro Wada

Toshiya Tsukahara

Mamoru Naoi

Susumu Nogami

Shingo Kitamura

Yosuke Tamura

Kota Yachi

A plasma processing apparatus includes a chamber, a lower electrode, an electrostatic chuck, an edge ring, a metal member, a driving unit, and a control device. The electrostatic chuck is provided on the lower electrode on which a substrate is placed. The edge ring is provided around the electrostatic chuck. The metal member is disposed along an outer wall of the lower electrode and is grounded. The driving unit moves the metal member along the outer wall of the lower electrode. The control device controls the driving unit to move the metal member so as to increase the area in which the outer wall of the lower electrode and the metal member overlap each other when viewed in a direction intersecting the surface of the outer wall of the lower electrode in accordance with an increase in the amount of wear of the edge ring.

Plasma processing apparatus and plasma processing method

A plasma processing method of processing a substrate with plasma in a plasma processing apparatus. The plasma processing apparatus includes: a chamber configured to accommodate a substrate; an upper electrode structure forming an upper portion of the chamber and including a temperature-controlled plate, an electrode plate disposed below the temperature-controlled plate, and an electrostatic attractor, the electrostatic attractor including a contact surface, an attraction surface, a first electrode, and a second electrode; a power supply configured to apply a voltage to the first and second electrodes; and a temperature obtaining portion configured to acquire a temperature distribution of the electrode plate. The plasma processing method includes: acquiring, by the temperature obtaining portion, the temperature distribution; applying a first voltage to the first electrode and applying a second voltage to the second electrode according to the acquired temperature distribution; and processing the substrate with plasma.

Plasma processing method and plasma processing apparatus

A plasma processing apparatus includes a cooling plate having a fixing surface to which an upper electrode is fixed, the cooling plate having, on the fixing surface, an electrostatic chuck configured to attract the upper electrode by an attraction force generated by an applied voltage; a power supply configured to apply the voltage to the electrostatic chuck; and a power supply controller configured to control the power supply such that an absolute value of the voltage applied to the electrostatic chuck is increased based on a degree of consumption of the upper electrode.

An annular member is disposed to surround a pedestal for receiving a substrate in a plasma processing apparatus. The annular member contains quartz and silicon. A content percentage of the silicon in the quartz and the silicon is 2.5% or more and 10% and less by weight.

Annular member, plasma processing apparatus and plasma etching method

A plasma processing apparatus includes a processing vessel, a lower electrode, an annular member, an inner upper electrode, an outer upper electrode, a processing gas supply, a first high frequency power supply and a first DC power supply. The lower electrode is configured to place a processing target substrate. The annular member is disposed on an outer peripheral portion of the lower electrode. The inner upper electrode is disposed to face the lower electrode. The outer upper electrode is disposed at an outside of the inner upper electrode. The first high frequency power supply applies a first high frequency power. The first DC power supply applies a first variable DC voltage to the outer upper electrode. At least a part of a surface of the outer upper electrode exposed to the processing space is located higher than a surface of the inner upper electrode exposed to the processing space.

Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.

Substrate processing apparatus

Focusing ring

A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.

Reflecting device, communicating pipe, exhausting pump, exhaust system, method for cleaning the system, storage medium storing program for implementing the method, substrate processing apparatus, and particle capturing component

A substrate mounting table of a substrate processing apparatus includes a base portion and a circular plate-shaped electrostatic chuck adhered to an upper surface of the base portion by an adhesive layer. The electrostatic chuck has a circular attracting surface to support a substrate. The substrate mounting table further includes an annular focus ring arranged around the electrostatic chuck to surround the substrate and to cover an outer peripheral portion of the upper surface of the base portion. The electrostatic chuck has a two-layer structure including an upper circular part and a lower circular part having a diameter larger than that of the upper circular part. An outer peripheral portion of the lower circular part and an outer peripheral portion of the adhesive layer adhering the lower circular part to the base portion are covered with the focus ring.

Substrate mounting table of substrate processing apparatus

A heat-transfer structure which can keep a consumable component at a temperature of 225&#xb0; C. or less during etching of a substrate. The heat-transfer structure is disposed in a chamber where plasma processing is performed on a wafer as the substrate under a reduced pressure. The heat-transfer structure is comprised of a focus ring having an exposed surface exposed to plasma, a susceptor and an electrostatic chuck that cool the consumable component, and a heat-transfer sheet interposed between the focus ring and the electrostatic chuck and made of a gel-like material. The ratio of hardness of the heat-transfer sheet expressed in Asker C to thermal conductivity of the heat-transfer sheet expressed in W/m&#xb7;K is less than 20.

Heat-transfer structure and substrate processing apparatus

A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an Ogas, and ashing the resist film by using a processing gas containing at least an Ogas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.

Plasma processing method and apparatus

In a plasma processing apparatus that executes plasma processing on a semiconductor wafer placed inside a processing chamber by generating plasma with a processing gas supplied through a gas supply hole at an upper electrode (shower head) disposed inside the processing chamber, an interchangeable insert member is inserted at a gas passing hole at a gas supply unit to prevent entry of charged particles in the plasma generated in the processing chamber into the gas supply unit. This structure makes it possible to fully prevent the entry of charged particles in the plasma generated inside the processing chamber into the gas supply unit.

Plasma processing apparatus and the upper electrode unit

An exhausting system and an exhausting pump connected to a processing chamber of a substrate processing apparatus are provided. The exhausting pump is provided with at least one rotary blade and a cylindrical intake part disposed at the processing chamber side from the rotary blade. The exhausting pump includes a reflecting device disposed inside the intake part and having at least one reflecting surface oriented to the rotary blade.

Exhaust system and exhausting pump connected to a processing chamber of a substrate processing apparatus

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Nirasaki, Japan

Tetsuji Sato