Ulvac, Inc.

Nihon Shinku Gijutsu Kabushiki Kaisha

Tetsuji Kiyota

Satoru Toyoda

Yoshiyuki Kadokura

Hisaharu Obinata

A sputtering apparatus in which the distance between a target and a substrate is made to be at least greater than the diameter of the circular substrate wafer and an internal gas pressure level of a vacuum chamber is held to be not higher than 1&times;10,Pa during sputtering process, thereby capable of effectively filling pores provided on the substrate without generating dust and void spaces.

Sputtering apparatus for filling pores of a circular substrate

A magnetron sputtering apparatus with an improved magnetic field distribution on the surface of a target, so that a film is formed satisfactorily in each and every recess in a substrate arranged in the apparatus, wherein the magnet is so arranged as to produce a magnetic field distribution on the surface of the target having a horizontal magnetic field intensity equal to 0 only at points located within the outer periphery of the target and to ignite electric discharge at a pressure level as low as 10.sup.-2 Pa. The magnet is also so configured as to produce a magnetic field distribution having a horizontal magnetic field intensity of not lower than 140 Gauss at a position on the surface of the target where the vertical magnetic field intensity is equal to 0 and a vertical magnetic field intensity of not lower than 60 Gauss at a position on the surface of the target where the horizontal magnetic field intensity is equal to 0.

Growing community of inventors

Chigasaki, Japan

Tetsuji Kiyota