Denso Corporation

Nippondenso Co., Ltd.

Tetsuaki Kamiya

Koji Kondo

Toshikazu Harada

Shoji Miura

Yoshitaro Yazaki

Makio Iida

Tomohiro Yokochi

Yasutaka Kamiya

Gentaro Masuda

Ryuichi Onoda

Satoshi Shiraki

Makoto Ohkawa

Osamu Ishihara

Single-sided conductor patterned films are prepared, each of which has a conductor pattern formed only one side of a resin film and via hole filled with conductive paste. A single-sided conductor patterned film which has a conductor pattern formed only one side of a resin film and an opening formed in the resin film so as to expose an electrode is laminated on the single-sided conductor patterned films. Moreover, a cover layer with an opening to expose an electrode is laminated on a bottom surface of the single-sided conductor patterned films to form a laminate. Then, by pressing while heating the laminate, a multilayer substrate having the electrodes at both sides thereof can be produced.

Manufacturing method of multilayer substrate

Manufacturing method of multilayer substrate and multilayer substrate produced by the manufacturing method

A laser trimming is favorably performed by a strengthened laser beam energy. A level difference portion having a taper portion that is oblique with respect to the thicknesswise direction of a semiconductor substrate is formed at a surface of a semiconductor substrate. An insulating film is formed thereon and has its surface made flat, and then the thin film element is formed thereon. Thereafter, laser trimming is performed with respect to the thin film resistor. As a result, a state of interference between incident laser beam and reflected laser beam reflected from the interface between the semiconductor substrate and the insulating film is varied to thereby enable the production of a zone where laser beam energy is strengthened and a zone where laser beam energy is weakened.

Semiconductor device having oblique portion as reflection

A thin film resistor on a semiconductor device may be laser trimmed while reducing the influence of film thickness of a passivation film formed on the thin film resistor. An underlying oxide film consisting of a BPSG film and a silicon oxide film is formed on an Si substrate. A silicon oxide film and a silicon nitride film are formed on the underlying film as a passivation film, and a silicon oxide film is formed on this assembly. The silicon oxide film contributes to controlling a variation of the laser energy absorption rate of a thin film resistor due to an uneven thickness of the silicon nitride film. Thus, it is possible to stabilize adjustment of the resistance value of the thin film resistor with a laser.

Semiconductor device with thin film resistor having reduced film

Growing community of inventors

Nagoya, Japan

Tetsuaki Kamiya