Tokyo Electron Limited

Tetsu Tsunamoto

Masanori Sato

Yoshinori Osaki

Toshiyuki Arakane

Ryusei Kashimura

A control method includes: (a) connecting a power supply to an electrode of an electrostatic chuck inside a chamber and applying a voltage from the power supply to the electrode; (b) after (a), switching a connection between the electrode and the power supply to a non-connection state; (c) after (b), supplying a gas into the chamber to generate plasma; and (d) measuring a potential of the electrode during (c).

Control method and plasma processing apparatus

A discharging method of removing electric charge from a substrate is provided. In the discharging method, gas is supplied into a processing chamber while the substrate is placed on an electrostatic chuck provided in the processing chamber, and direct-current (DC) voltage is applied to an attracting electrode of the electrostatic chuck, until discharge occurs in the processing chamber. After the discharge occurs, the DC voltage is adjusted to a magnitude in which an amount of charge on the substrate becomes zero or becomes in a neighborhood of zero, and the substrate is removed from the electrostatic chuck.

Discharging method and substrate processing apparatus

In a measurement method, a terminal is brought into contact with an electrode in an electrostatic chuck in contact with a substrate that is grounded. Further, the terminal, the electrostatic chuck and the substrate are fixed, and a current value and a voltage value are measured using an ammeter and a voltmeter, respectively, that are connected to the terminal. In addition, whether or not the terminal and the electrode are electrically connected is determined from a slope of the current value and/or a peak current value based on the measured current value and the voltage value.

Measurement method and measuring jig

A measuring device includes a switch that switches a connection of an electrode to which a direct current voltage is applied, wherein the electrode is within an electrostatic chuck disposed in a plasma processing device; a component provided with electrostatic capacitance, wherein the component is connected to the switch; and a measuring unit that measures a value corresponding to an electric charge amount accumulated in the component provided with the electrostatic capacitance.

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Miyagi, Japan

Tetsu Tsunamoto