Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Teruyoshi Yao

Satoru Asai

Morimi Osawa

Hiromi Hoshino

Kazumasa Morishita

Kouzou Ogino

Koichi Hashimoto

Eiichi Kawamura

Nobuhisa Naori

Tadasi Oshima

Masaharu Kobayashi

Kozo Ogino

Isamu Hanyu

Hiroshi Arimoto

Katsuyoshi Kirikoshi

Hajime Aoyama

In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.

Mask pattern correction device, method of correcting mask pattern, light exposure correction device, and method of correcting light exposure

A test photomask includes a first mask pattern and a second mask pattern formed at a center portion of the first mask pattern thereon. The first mask pattern is a pattern with light condensing effect and a nature in which an exposure-dose amount to a transfer object varies in dependence on a focus variation, which is a two-dimensional Fresnel zone pattern here.

Photomask, focus measurement apparatus and focus measurement method

A correction of a local flare generated at a time of exposure when manufacturing a semiconductor device, wherein a substantial numerical aperture to a pattern in a region to be exposed is calculated for the each region, after that, the flare correction amount for the pattern in the each region is adjusted in conformity with the substantial numerical aperture and exposure conditions in the each region. Backed by this, the effect of the local flare on the pattern exposed by photolithography can be quantitatively corrected in conformity with the respective exposure conditions, so that a desired pattern can be formed readily and accurately.

Local flare correction

The width values of transferred patterns of respective evaluation patterns transferred using a test photo mask () are calculated by first calculation unit () based on the relationship with the opening ratio of flare generation patterns. The distribution of the calculated width values of the respective transferred patterns is linearly approximated by second calculation unit () and the inclination thereof is calculated. On the basis of a table defining the inclination of the width values of the respective transferred patterns (the ratio of dimension fluctuation), the amount of correction is changed for each pattern by correction unit (). Consequently, the amount of dimension fluctuation caused by local flares can be accurately calculated. This enables accurately performing pattern-dimension corrections against local flares.

Apparatus and method for correcting pattern dimension and photo mask and test photo mask

A method, wherein a plurality of first patterns are formed in an exposure region, and second patterns are formed by plural shots, with positions of alignment marks measured for said plurality of first patterns to give first positional information; relative positions of said plurality of first patterns to a first coordinate system are measured, to thereby compute first disalignments relative to the first coordinate system; second positional information is computed by subtracting the first disalignments from the first positional information; relative positions of said plural basic regions with respect to a second coordinate system are measured, to thereby compute second disalignments of the first pattern relative to the second coordinate system; third positional information is computed by subtracting the first and second disalignments from the first positional information; third disalignments of the first pattern with respect to a third coordinate system are computed; and positioning with respect to the first pattern is made when the second pattern is exposed, based on the first to third disalignments.

Aligning method

A pattern size correcting device includes: a testing photomask () having a test pattern; a quantifying unit () that quantifies, using the testing photomask (), size variation in the test pattern as a function of distance and in relation to an open area ratio; an open area ratio calculating unit () that divides an exposure area having a plurality of actual device patterns into a plurality of correction areas and calculates the open area ratio of the respective correction areas; a data correcting unit () that inputs the open area ratio calculated by the open area ratio calculating unit () into a result of the quantification that uses the photomask (), calculates size variations of the actual device patterns in the respective correction areas, and corrects design data of the actual device patterns based on the calculation; and a proximity effect correcting unit correcting a proximity effect. This correcting device enables quantitative estimation of size variation occurring in a pattern exposed in lithography and easy and accurate correction of pattern size based on the estimation.

Pattern size correcting device and pattern size correcting method

Through use of a line pattern which becomes a pattern under measurement and a zone pattern in a zonal shape which becomes a flare causing pattern forming a light transmission region which surrounds the line pattern and causes local flare to occur on the line pattern, the effect of the local flare due to the zone pattern on the line pattern is measured as a line width of the line pattern for evaluation. Further, this measurement value is used to compensate the effect of the local flare on each real pattern.

Test photomask, flare evaluation method, and flare compensation method

A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity I &equals;I&dgr;/I to 0.2 or smaller, where I is an average value of light intensity in the photoresist film, and I&dgr; is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.

Manufacture of semiconductor device using A-C anti-reflection coating

A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity I.sub.sw =I.delta./I.sub.ave to 0.2 or smaller, where I.sub.ave is an average value of light intensity in the photoresist film, and I.delta. is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.

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Kawasaki, Japan

Teruyoshi Yao