Tokyo Electron Limited

Tokyo Electron Limi Ted

Teruhiko Kodama

Yasushi Takiguchi

Akihiro Kubo

Masashi Enomoto

Yoshiki Okamoto

Nobuhiko Mouri

Takanori Obaru

Hayato Hosaka

Taro Yamamoto

Yuichi Terashita

Akiko Kai

Takafumi Niwa

Koichi Matsunaga

Shogo Takahashi

Hiroshi Nishihata

Anton J deVillers

Jeffrey Smith

Benjamen M Rathsack

Masahide Tadokoro

Makoto Muramatsu

Joshua Hooge

Lior Huli

Keiichi Tanaka

Carlos A Fonseca

Kosuke Yoshihara

Yoshihiro Kondo

Hideaki Iwasaka

Ryuto Ozasa

Yuji Ariuchi

Shinsuke Kimura

Takafumi Hashimoto

Nozomu Kanetake

A substrate warpage correction method according to this disclosure corrects warpage of a substrate without performing a process on a front surface of the substrate. The substrate warpage correction method includes a surface roughening of performing a surface roughening process on a rear surface of the substrate using a surface roughening processing apparatus configured to be able to perform the surface roughening process on the rear surface of the substrate, to form grooves in the rear surface to thereby correct the warpage of the substrate.

Substrate warpage correction method, computer storage medium, and substrate warpage correction apparatus

A substrate processing apparatus that forms a friction reducing film on a rear surface of a substrate includes a processing container configured to accommodate the substrate and to define a hermetically-sealed processing space, a heating element configured to heat the rear surface of the substrate inside the processing container, a supplier configured to supply a material forming the friction reducing film toward the rear surface of the substrate inside the processing container, a first gas supplier configured to supply an inert gas to a peripheral edge of the substrate from a space above the substrate, a second gas supplier configured to supply the inert gas closer to a center of the substrate than the first gas supplier from a space above the substrate inside the processing, and an exhauster configured to exhaust an atmosphere of the processing space from a periphery or a space below the substrate.

Substrate processing apparatus and substrate processing method

A substrate processing method includes: performing a both-surface cleaning processing in which a first cleaning body, which ejects the fluid to the one surface or is brought into contact with the one surface, and subsequently moves both the first cleaning body and a second cleaning body, which is in contact with the remaining surface of the upper surface and the lower surface of the substrate and rotated around a first vertical axis, horizontally in synchronization with each other toward an outer peripheral portion of the substrate, and performing a side end cleaning processing in which a third cleaning body is rotated around a second vertical axis and brought into contact with the side end of the substrate to clean the side end of the substrate while simultaneously performing the both-surface cleaning processing.

A substrate processing apparatus includes a substrate holder, a first cleaning body, a first moving mechanism, a second cleaning body, a second moving mechanism, and a controller. The first cleaning body cleans one of the upper surface and the lower surface of the substrate held by the substrate holder by ejecting fluid thereto or by coming into contact therewith. The second cleaning body cleans the other one of the upper surface and the lower surface of the substrate held by the substrate holder by coming into contact therewith. The controller controls the first moving mechanism and the second moving mechanism to perform a both-surface cleaning processing in which the first cleaning body which ejects the fluid to one surface or is in contact with the upper surface and the second cleaning body which is in contact with the lower surface are horizontally moved in synchronization with each other.

A method of processing a substrate, includes emitting light including vacuum ultraviolet light to a front surface of the substrate, which has a resist film formed thereon from a resist material for EUV lithography, before an exposure process in an interior of a processing container.

Substrate processing method, substrate processing apparatus, and storage medium

A substrate cleaning apparatus configured to clean a surface of a substrate having a circular shape by bringing a cleaning member into contact with the surface of the substrate and rotating the substrate and the cleaning member relatively is provided. A contact region of the cleaning member which comes into contact with the surface of the substrate is widened in a radial shape from a center side of the substrate toward a peripheral side thereof.

Substrate cleaning apparatus and substrate cleaning method

A substrate processing apparatus includes a polishing member having a polishing surface configured to perform a polishing of a main surface of a substrate; a first dressing member having a first dressing surface configured to perform a dressing of the polishing surface; a second dressing member having a second dressing surface configured to perform a dressing of the first dressing surface; a holding member configured to hold the polishing member and the second dressing member; and a driving unit configured to, by moving the holding member, switch a first state in which the first dressing surface and the polishing surface come into contact with each other to perform the dressing of the polishing surface and a second state in which the first dressing surface and the second dressing surface come into contact with each other to perform the dressing of the first dressing surface.

Substrate processing apparatus

A substrate processing apparatus includes a film-forming device that forms a photosensitive film on a front surface of a substrate, a warping data acquisition device that acquires measured warping data of the substrate, a roughening process device that applies roughening process on a back surface of the substrate, and a control device including circuitry that controls the warping data acquisition device such that after the photosensitive film is formed on the front surface of the substrate, the warping data acquisition device acquires the measured warping data before the photosensitive film on the substrate undergoes exposure process, and control the roughening process device such that before the photosensitive film on the substrate undergoes the exposure process, the roughening process device applies the roughening process on the back surface of the substrate based on the measured warping data.

Substrate processing capable of suppressing a decrease in throughput while reducing the impact on exposure treatment caused by warping of a substrate

A substrate treatment apparatus for applying a coating solution to a front surface of a substrate and developing an exposed coating film on the front surface of the substrate, includes a film forming unit configured to form a friction reducing film on a rear surface of the substrate before exposure processing, the friction reducing film reducing friction between the rear surface of the substrate and a holding surface for holding the rear surface of the substrate in the exposure processing.

Substrate treatment apparatus, substrate treatment method, and computer storage medium

A substrate processing apparatus includes: a first holding part configured to hold a substrate; a second holding part configured to hold the substrate; a sliding member configured to rotate about a vertical axis so that the sliding member slides on a back surface of the substrate; a revolution mechanism configured to revolve the sliding member under rotation about a vertical revolution axis; and a relative movement mechanism configured to horizontally move a relative position between the substrate and a revolution trajectory of the sliding member so that when the substrate is held by the first holding part, the sliding member slides on a central portion of the back surface of the substrate, and when the substrate is held by the second holding part, the sliding member slides on the peripheral portion of the back surface of the substrate under rotation.

Substrate processing apparatus, substrate processing method and storage medium

A substrate processing method, includes acquiring a height distribution along a radial direction of a substrate in a peripheral edge portion of a front surface of the substrate, forming an underlayer film on the entire front surface of the substrate so as to correct a drop of a height of the peripheral edge portion based on the height distribution, and forming a resist film on the entire surface of the underlayer film.

A substrate processing system includes a film-forming device to form photosensitive film on substrate, an exposure device to expose the film on the substrate, a relay device to transfer the substrate between the film-forming and exposure devices, a warping data acquisition device to acquire measured warping data of the substrate, a communication device to perform data communication with the exposure device, and a control device including film-forming, relay, measuring, and communication control sub-devices. The film-forming sub-device controls the film-forming device to form the film on the substrate, the relay sub-device controls the relay device to transfer the substrate to the exposure device, the measuring sub-device controls the warping data acquisition device to acquire the data after the controlling by the film-forming sub-device prior to the controlling by the relay sub-device, and the communication sub-device controls the communication device to transmit the data to the exposure device.

Substrate processing apparatus, substrate processing method and memory medium

There is provided a substrate processing method which includes polishing a rear surface of a substrate before a pattern exposure such that the rear surface is subjected to a roughening treatment; and bypassing a roughness alleviating treatment with respect to the polished rear surface of the substrate.

Substrate processing method and substrate processing apparatus

A liquid processing apparatus for liquid-processing a substrate includes a substrate holding device that rotates a substrate in horizontal position, a nozzle holding device holding processing liquid and gas nozzles, the liquid nozzle discharging processing liquid from a discharge port such that the liquid is discharged obliquely to surface of the substrate, the gas nozzle discharging gas perpendicularly to the surface of the substrate, a moving device that moves the nozzle device with respect to the surface of the substrate, and a control device including circuitry that controls the nozzle, substrate and moving devices such that while the substrate is rotated, the liquid is discharged to peripheral portion toward downstream side in rotation direction and along tangential direction of the substrate and gas is discharged from the gas nozzle toward position adjacent to liquid landing position of the liquid on the surface and is on center side of the substrate.

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Koshi, Japan

Teruhiko Kodama