Varian Associates, Inc.

Varian Semiconductor Equipment Associates, Inc.

Terry T Sheng

Susan Benjamin Felch

Charles B Cooper, Iii

Charles E Van Wagoner

Implantation process for cold cathode plasma immersion ion implantation (C PI ) without a continuous plasma using very short high voltage, low duty cycle ionization pulses, in conjunction with a synchronously produced electron flow to neutralize positively charged wafer surfaces.

Plasma immersion ion implantation process

A charge measuring system for determining implantation dose in a PI.sup.3 system with means to compensate for current in the charge sensor which does not arise from positive ions arriving on the wafer.

Charge monitor for high potential pulse current dose measurement

Implantation apparatus for cold cathode plasma immersion ion implantation (C.sup.2 PI.sup.3) without a continuous plasma using very short high voltage, low duty cycle ionization pulses, in conjunction with a synchronously produced electron flow to neutralize positively charged wafer surfaces.

Growing community of inventors

San Jose, CA, United States of America

Terry T Sheng