Silicon Integrated Systems Corporation

Teng-Feng Wang

Lung Chen

Chen-Chiu Hsue

Yung-Shin Wang

Shih-Hui Chang

Zen-Long Yang

A method for manufacturing a MOS device with improved well control stability. The method includes the steps of providing a semiconductor substrate; forming a gate electrode according to a critical dimension on the semiconductor substrate, wherein the gate electrode comprises a gate oxide layer and a conducting gate; inspecting a real dimension of the conducting gate; determining a thickness of subsequently formed conducting gate spacers according to the real dimension of the conducting gate, such that variations of electric characteristics of the device affected by the critical dimension of the conducting gate are reduced; and forming the conducting gate spacers with the determined thickness on sidewalls of the gate electrode.

Method for manufacturing a MOS device with improved well control stability

A novel process for isolating devices on a semiconductor substrate is disclosed. An isolation layer is first formed over the semiconductor substrate and patterned into at least two isolation mesas on the substrate. Next, a blanket semiconductor layer is formed over the substrate with a thickness sufficient to cover the isolation mesas. The semiconductor layer is subjected to planarization until the isolation mesas are exposed, thus resulting in a semiconductor region between the two isolation mesas to serve as an active region for semiconductor devices.

Growing community of inventors

Chang-Hwa Hsien, Taiwan

Teng-Feng Wang