Asml Netherlands B.v.

Teis Johan Coenen

Erik Roelof Loopstra

Andrey Alexandrovich Nikipelov

Gosse Charles De Vries

Sander Bas Roobol

Wouter Joep Engelen

Alexey Olegovich Polyakov

Vadim Yevgenyevich Banine

Pieter Willem Herman De Jager

Han-Kwang Nienhuys

Olav Waldemar Vladimir Frijns

Jim Vincent Overkamp

Johannes Antonius Gerardus Akkermans

Petrus Wilhelmus Smorenburg

Gerrit Jacobus Hendrik Brussaard

Evgenia Kurganova

Tamara Druzhinina

Leonardus Adrianus Gerardus Grimminck

Petrus Rutgerus Bartraij

Andelko Katalenic

Albertus Victor Gerardus Mangnus

Wilhelmus Patrick Elisabeth Maria Op 't Root

Seyed Iman Mossavat

Peter Danny Van Voorst

Niels Geypen

Ruben Cornelis Maas

Alexander Ludwig Klein

Sonia Castellanos Ortega

Gijsbertus Geert Poorter

Sipke Jacob Bijlsma

Olivier Christian Maurice Lugier

Marijke Scotuzzi

Ilse Van Weperen

Ionel Mugurel Ciobica

Bastiaan Maurice Van Den Broek

Sandy Claudia Scholz

Wilhelmus Patrick Elisabeth Maria Op'T Root

Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a deposition-process material is provided in gaseous form. A layer of the deposition-process material is formed on the substrate by causing condensation or deposition of the gaseous deposition-process material. A selected portion of the layer of deposition-process material is irradiated to modify the deposition-process material in the selected portion.

Method and apparatus for forming a patterned layer of material

Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated during a deposition process, the irradiation being such as to locally drive the deposition process in the selected portion to form a layer of deposited material in a pattern defined by the selected portion. The deposited material is annealed to modify the deposited material.

Methods and apparatus for determining a parameter of a structure fabricated in or on a substrate and compensated for a drift error. The methods comprising: illuminating, at a plurality of times, at least part of the structure with electromagnetic radiation, the at least part of the structure being at a first orientation; sensing, at the plurality of times, a plurality of average reflectances of the at least part of the structure; and determining, based on the plurality of average reflectances, an estimation of the parameter at one or more further times.

Metrology measurement method and apparatus

A particle beam apparatus includes an object table configured to hold a semiconductor substrate; a particle beam source configured to generate a particle beam; a detector configured to detect a response of the substrate caused by interaction of the particle beam with the substrate and to output a detector signal representative of the response; and a processing unit configured to: receive or determine a location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects within the one or more defect target areas, based on the detector signal obtained during the inspection of the one or more defect target areas; control the particle beam source to repair the one or more defects.

Particle beam apparatus, defect repair method, lithographic exposure process and lithographic system

Methods and apparatus for determining an intensity profile of a radiation beam. The method comprises providing a diffraction structure, causing a relative movement of the diffraction structure relative to the radiation beam from a first position, wherein the radiation beam does not irradiate the diffraction structure to a second position, wherein the radiation beam irradiates the diffraction structure, measuring, with a radiation detector, diffracted radiation signals produced from a diffraction of the radiation beam by the diffraction structure as the diffraction structure transitions from the first position to the second position or vice versa, and determining an intensity profile of the radiation beam based on the measured diffracted radiation signals.

Method and apparatus for determining a radiation beam intensity profile

Methods and apparatus for directing onto a substrate a radiation beam emitted as a result of high harmonic generation (HHG). Exemplary apparatus comprising: a drive radiation source; an interaction region configured to receive a medium and positioned such that a drive radiation beam from the drive radiation source interacts with the medium during use to generate the emitted radiation beam by HHG, wherein the emitted radiation beam comprises a plurality of wavelengths and wherein an emission divergence angle of the emitted radiation is wavelength dependent; an optical system downstream of the interaction region and configured to focus the emitted radiation beam, wherein the plurality of wavelengths of the emitted radiation beam are focused at a plurality of focal planes in dependence on the associated emission divergence angle; and a substrate support for holding the substrate at one of a plurality of axial positions relative to the plurality of focal planes, wherein one or more of the drive radiation source, the interaction region, the optical system and the substrate support is configurable to control a relative position of at least one of the focal planes with respect to the substrate.

Methods and apparatus for metrology

In a method of determining an edge roughness parameter of a periodic structure, the periodic structure is illuminated () in an inspection apparatus. The illumination radiation beam may comprise radiation with a wavelength in the range 1 nm to 100 nm. A scattering signal () is obtained from a radiation beam scattered from the periodic structure. The scattering signal comprises a scattering intensity signal that is obtained by detecting an image of a far-field diffraction pattern in the inspection apparatus. An edge roughness parameter, such as Lined Edge Roughness and/or Line Width Roughness is determined () based on a distribution of the scattering intensity signal around a non-specular diffraction order. This may be done for example using a peak broadening model.

Determining an edge roughness parameter of a periodic structure

A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the structure having diffractive properties, the apparatus comprising: focusing optics configured to focus illumination radiation comprising a plurality of wavelengths onto the structure; a first detector configured to detect at least part of the illumination radiation which has been diffracted from the structure; and additional optics configured to produce, on at least a portion of the first detector, a wavelength-dependent spatial distribution of different wavelengths of the illumination radiation which has been diffracted from the structure, wherein the first detector is arranged to detect at least a non-zero diffraction order of the illumination radiation which has been diffracted from the structure.

Metrology apparatus for and a method of determining a characteristic of interest of a structure on a substrate

A photocathode comprises a substrate in which a cavity is formed and a film of material disposed on the substrate. The film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation. The electron emitting surface is on an opposite side of the film of material from the cavity.

Electron injector and free electron laser

Passage through LINACs of electron bunches in their acceleration phase is coordinated with passage through the LINACs of electron bunches in their deceleration phase. Each successive pair of electron bunches are spaced in time by a respective bunch spacing, in accordance with a repeating electron bunch sequence. The electron source provides clearing gaps in the electron bunch sequence to allow clearing of ions at the undulator. The electron source provides the clearing gaps in accordance with a clearing gap sequence such that, for each of the plurality of energy recovery LINACS, and for substantially all of the clearing gaps: for each passage of the clearing gap through the LINAC in an acceleration phase or deceleration phase the clearing gap is coordinated with a further one of the clearing gaps passing through the LINAC in a deceleration phase or acceleration phase thereby to maintain energy recovery operation of the LINAC.

Radiation source

An injector arrangement for providing an electron beam. The injector arrangement comprises a first injector for providing electron bunches, and a second injector for providing electrons bunches. The injector arrangement is operable in a first mode in which the electron beam comprises electron bunches provided by the first injector only and a second mode in which the electron beam comprises electron bunches provided by the second injector only.

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Vught, Netherlands

Teis Johan Coenen