Matsushita Electric Industrial Co., Ltd.

Teiichi Kimura

Isamu Aokura

Masahiro Yamamoto

Hiroshi Hayata

Munekazu Nishihara

Yoshihiro Yanagi

Kiyohiko Takagi

Nobuyuki Mori

In dry etching process wherein a substrate having a multi-layer film is etched, the etching process is monitored by determining a layer being processed. CHFgas is added to the processing gas during a period from the time when the lowermost layer on the substrate is etched until the etching is completed.

Dry etching method

In a sputtering apparatus, in a vacuum chamber having a gas supply and a gas discharge functions, a substrate is set to a supporting part therefor and a target is disposed at an electrode connected with a power source within a plane opposite to the substrate, so as to form a film while holding the substrate in a fixed state to the target. The electrode is divided into three or more electrode parts, the target is divided and disposed on the three or more electrode parts within the plane, and a magnet is arranged for each divided target at a position where a line of magnetic force on a surface of the each target is generated by each magnet.

Sputtering apparatus

The film thickness of a thin film formed on substrate,is made symmetrical and uniform by eliminating currents of gas over target,by performing film deposition in a condition with gas supply and vacuum evacuation cut off, after adjusting the interior of vacuum chamber,to the predetermined pressure.

Sputtering method and apparatus

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Itami, Japan

Teiichi Kimura