Novellus Systems Incorporated

Ted Li

David Wingto Cheung

Haoquan Fang

Ilia Kalinovski

Kirk J Ostrowski

Jack Kuo

Anirban Guha

Andrew Yao

Improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.

Enhanced passivation process to protect silicon prior to high dose implant strip

Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160&#xb0; C. or less, e.g., less than about 90&#xb0; C.

Low damage photoresist strip method for low-K dielectrics

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Sunnyvale, CA, United States of America

Ted Li