Infineon Technologies Ag

Infineon Technologies Austria Ag

Teck Sim Lee

Ralf Otremba

Lee Shuang Wang

Edward Fuergut

Klaus Schiess

Xaver Schloegel

Bernd Schmoelzer

Amirul Afiq Hud

Josef Hoeglauer

Juergen Schredl

Chii Shang Hong

Chooi Mei Chong

Ke Yan Tean

Wae Chet Yong

Franz Stueckler

Bernd Goller

Erich Griebl

Markus Dinkel

Uwe Kirchner

Fabio Brucchi

Liu Chen

Chee Voon Tan

Sanjay Kumar Murugan

Fabian Schnoy

Mario Feldvoss

Guenther Lohmann

Mohd Hasrul Zulkifli

Jo Ean Joanna Chye

Felix Grawert

Boon Kian Lim

Wei-Shan Wang

Rainald Sander

Matteo-Alessandro Kutschak

Matthias Strassburg

Thomas Stoek

Stefan Macheiner

Thai Kee Gan

Daniel Pedone

Chiew Li Tai

Christian Kasztelan

Wee Boon Tay

Jia Yi Wong

Edmund Sales Cabatbat

Mohd Kahar Bajuri

Frank Püschner

Boon Huat Lim

Wei Han Koo

Gilles Delarozee

Franz Gabler

Norbert Joson Santos

Wolfgang Peinhopf

Hsieh Ting Kuek

Kwai Hong Wong

Hui Kin Lit

Bernhard Schätzler

Thomas Stoeck

Hwee Yin Low

Wei Hing Tan

Gaylord Evangelista Cruz

Chin Wei Yang

Raynold Talavera Corocotchia

Pei Pei Kong

Franz Stückler

A package is disclosed. In one example, the package includes a first main face for mounting a heat sink and an opposing second main face for being mounted on a mounting base. The package comprises a carrier, an electronic component mounted at the carrier, and an encapsulant encapsulating at least part of the electronic component and at least part of the carrier. Electrically insulating material covers electrically conductive material of the carrier at said first main face. The encapsulant comprises at least one step at the first main face.

Package with electrically insulated carrier and at least one step on encapsulant

A package for mounting on a mounting base is disclosed. In one example, the package comprises a carrier, an electronic component mounted at the carrier, leads electrically coupled with the electronic component and to be electrically coupled with the mounting base, and a linear spacer for defining a spacing with respect to the carrier.

Linear spacer for spacing a carrier of a package

A semiconductor device includes a carrier, a first external contact, a second external contact, and a semiconductor die. The semiconductor die has a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor. The semiconductor die is disposed with the first main face on the carrier. A clip connects the second contact pad to the second external contact. A first bond wire is connected between the third contact pad and the first external contact. The first bond wire is disposed at least partially under the clip.

Method for fabricating a semiconductor device by using different connection methods for the semiconductor die and the clip

A semiconductor package is disclosed. In one example, the semiconductor package includes a chip carrier, a semiconductor chip attached to the chip carrier, an encapsulation body encapsulating the semiconductor chip, and a mounting hole configured to receive a screw for screw mounting a heatsink onto a first side of the semiconductor package. A second side of the semiconductor package opposite the first side is configured to be surface mounted to an application board.

Semiconductor package, semiconductor assembly and method for fabricating a semiconductor package

A semiconductor package includes a die pad having a die attach surface, a first laterally separated and vertically offset from the die pad, a semiconductor die mounted on the die attach surface and comprising a first terminal on an upper surface of the semiconductor die, an interconnect clip that is electrically connected to the first terminal and to the first lead, and a heat spreader mounted on top of the interconnect clip. The interconnect clip includes a first planar section that interfaces with the upper surface of the semiconductor die and extends past an outer edge side of the die pad. The heat spreader covers an area of the first planar section that is larger than an area of the semiconductor die. The heat spreader laterally extends past a first outer edge side of the die pad that faces the first lead.

Semiconductor package with expanded heat spreader

A package includes a package body with a package top side, package footprint side and package sidewalls extending from the package footprint side to the package top side; power semiconductor chips electrically connected in parallel and each having first and second load terminals and being configured to block a blocking voltage and conduct a chip load current between the load terminals; a lead frame structure configured to electrically and mechanically couple the package to a carrier with the package footprint side facing the carrier, the lead frame structure including first outside terminals extending out of the package body for interfacing with the carrier. Each first load terminal is electrically connected, at least by one package body internal connection member, to at least two of the first outside terminals. A horizontally extending conduction layer at the package top side or footprint side is electrically connected with each second load terminal.

Multi-chip package

A lead frame includes a die pad, a row of two or more leads that extend away from a first side of the die pad, and a peripheral structure disposed opposite the die pad and connected to each lead. A first outermost lead is continuously connected to the die pad. A second outermost lead has an interior end that faces and is spaced apart from the die pad. A width of the second lead in a central span of the second lead is greater than the width of the second lead in interior and outer spans of the second lead, the interior span of the second lead separating the central span of the second lead from the interior end of the second lead, the outer span of the second lead separating the central span of the second lead from the peripheral structure.

Package and lead frame design for enhanced creepage and clearance

A semiconductor chip package includes an electrically conducting carrier and a semiconductor chip disposed over the electrically conducting carrier. The semiconductor chip has a first surface facing the electrically conducting carrier and a second surface opposite the first surface. A metal plate has a first surface mechanically connected to the second surface of the semiconductor chip and a second surface opposite the first surface of the metal plate. The metal plate completely overlaps the second surface of the semiconductor chip. The second surface of the metal plate is at least partially exposed at a periphery of the semiconductor chip package.

Semiconductor chip package having a cooling surface and method of manufacturing a semiconductor package

A package encloses a power semiconductor die and has a package body with a package top side, package footprint side and package sidewalls. The die has first and second load terminals for blocking a blocking voltage. A lead frame structure electrically and mechanically couples the package to a support and includes an outside terminal extending out of the package footprint side and/or the sidewalls, and is electrically connected with the first load terminal. A top layer arranged at the package top side is electrically connected with the second load terminal. A creepage length between the electrical potential of the outside terminal and the electrical potential of the top layer is defined by a package body surface contour. The surface contour is formed at least by the package top side and package sidewall. At least one structural feature also forms the surface contour is configured to increase the creepage length.

SMD package with top side cooling

A device may include a carrier, a semiconductor chip arranged over a first surface of the carrier, and an encapsulation body comprising six side surfaces and encapsulating the semiconductor chip. A second surface of the carrier opposite to the first surface of the carrier is exposed from the encapsulation body. The device may further include electrical contact elements electrically coupled to the semiconductor chip and protruding out of the encapsulation body exclusively through two opposing side surfaces of the encapsulation body which have the smallest surface areas of all the side surfaces of the encapsulation body, and an electrically insulating layer arranged over the exposed second surface of the carrier.

Semiconductor devices with improved thermal and electrical performance

A package which comprises an electrically conductive chip carrier, a first chip comprising a first connection terminal, a second connection terminal located on the chip carrier and a control terminal, a second chip comprising a first connection terminal, a second connection terminal located on the chip carrier and a control terminal, wherein the first chip and the second chip are connected to form a half bridge having inlet terminals and an outlet terminal, and a clip having three connection sections connecting the second connection terminal of the first chip with the first connection terminal of the second chip and with the outlet terminal of the half bridge.

Transistor package with three-terminal clip

A semiconductor chip package includes a semiconductor chip disposed over a main surface of a carrier. An encapsulation body encapsulates the chip. First electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a first side face of the encapsulation body. Second electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a second side face of the encapsulation body opposite the first side face. A first group of the first electrical contact elements and a second group of the first electrical contact elements are spaced apart by a distance D that is greater than a distance P between adjacent first electrical contact elements of the first group and between adjacent first electrical contact elements of the second group. The distances D and P are measured between center axes of electrical contact elements.

Semiconductor chip package having a repeating footprint pattern

In some examples, a device includes a power supply element and a reference voltage element, wherein the reference voltage element is electrically isolated from the power supply element. The device further includes a high-side semiconductor die including at least two high-side transistors, wherein each high-side transistor of the at least two high-side transistors is electrically connected to the power supply element. The device also includes a low-side semiconductor die including at least two low-side transistors, wherein each low-side transistor of the at least two low-side transistors is electrically connected to the reference voltage element. The device includes at least two switching elements, wherein each switching element of the at least two switching elements is electrically connected to a respective high-side transistor of the at least two high-side transistors and to a respective low-side transistor of the at least two low-side transistors.

Semiconductor package for multiphase circuitry device

A method of forming a semiconductor device package includes providing a lead frame having a peripheral structure and a heat slug having an upper and lower surface, the heat slug being attached to the peripheral structure. A semiconductor die is attached to the heat slug. The semiconductor die is encapsulated with a molding compound while the heat slug is attached to the peripheral structure. The heat slug is completely devoid of fasteners before the encapsulating.

Semiconductor package with heat slug and rivet free die attach area

Growing community of inventors

Melaka, Malaysia

Teck Sim Lee