Advanced Semiconductor Engineering, Inc.

Ase (shanghai) Inc.

Ase Electronics Inc.

Teck-Chong Lee

Chien-Hua Chen

Yung-Shun Chang

Chih-Pin Hung

Ho-Ming Tong

Sheng-Chi Hsieh

Chao-Fu Weng

Cheng-Yuan Kung

Hung-Yi Lin

Meng-Wei Hsieh

Pao-Nan Lee

Tang-Yuan Chen

Chian-Chi Lin

Meng-Kai Shih

Shin-Hua Chao

Shin-Luh Tarng

Kao-Ming Su

Song-Fu Yang

Tsung-Yueh Tsai

Jau-Shoung Chen

Chen-Chao Wang

Ming-Chiang Lee

Jen-Chieh Kao

Chih-Yi Huang

Yu-Pin Tsai

Hsu-Chiang Shih

Tai-Yuan Huang

Chao-Yuan Liu

Chih-nan Wei

Sheng-Wen Yang

Chia-Jung Tsai

Yung-Cheng Huang

Che-Ya Chou

Chin-Li Kao

Hsin Hsiang Wang

Chung-Hung Lai

Shiuan-Yu Lin

Min-Tzu Hsu

Po-Hao Chen

Yen-Liang Huang

Po-Hsien Ke

A semiconductor package structure includes a semiconductor die and at least one pillar structure. The semiconductor die has an upper surface and includes at least one conductive pad disposed adjacent to the upper surface. The pillar structure is electrically connected to the conductive pad of the semiconductor die, and defines a recess portion recessed from a side surface of the pillar structure. A conductivity of the pillar structure is greater than a conductivity of the conductive pad.

Semiconductor package structure and method for manufacturing the same

A semiconductor package structure includes a circuit pattern structure, an encapsulant and an anchoring structure. The encapsulant is disposed on the circuit pattern structure. The anchoring structure is disposed adjacent to an interface between the encapsulant and the circuit pattern structure, and is configured to reduce a difference between a variation of expansion of the encapsulant and a variation of expansion of the circuit pattern structure in an environment of temperature variation.

Semiconductor package structure

A semiconductor device package includes a first conductive layer, a second conductive layer and a third conductive layer. The first conductive layer has a first pitch. The second conductive layer has a second pitch and is arranged at two different sides of the first conductive layer. The third conductive layer has a third pitch and is disposed above the first conductive layer and the second conductive layer. The third conductive layer is electrically connected to the first conductive layer. The first pitch is smaller than the third pitch, and the third pitch is smaller than the second pitch.

Semiconductor device packages and methods of manufacturing the same

A package structure and a manufacturing method are provided. The package structure includes a wiring structure, a first electronic device, a second electronic device, a first underfill, a second underfill and a stiff bonding material. The first electronic device and the second electronic device are disposed on the wiring structure, and are electrically connected to each other through the wiring structure. The first underfill is disposed in a first space between the first electronic device and the wiring structure. The second underfill is disposed in a second space between the second electronic device and the wiring structure. The stiff bonding material is disposed in a central gap between the first electronic device and the second electronic device. The stiff bonding material is different from the first underfill and the second underfill.

Package structure and method for manufacturing the same

A package structure is provided. The package structure includes an encapsulant and an interposer. The encapsulant has a top surface and a bottom surface opposite to the top surface. The interposer is encapsulated by the encapsulant. The interposer includes a main body, an interconnector, and a stop layer. The main body has a first surface and a second surface opposite to the first surface. The interconnector is disposed on the first surface and exposed from the top surface of the encapsulant. The stop layer is on the second surface, wherein a bottom surface of the stop layer is lower than the second surface.

Package structure with interposer encapsulated by an encapsulant

An electronic device package is provided. The electronic device package includes a redistribution layer (RDL), a first electronic component and an interconnector. The RDL includes a topmost circuit layer, and the topmost circuit layer includes a conductive trace. The first electronic component is disposed over the RDL. The interconnector is disposed between the RDL and the first electronic component. A direction is defined by extending from a center of the first electronic component toward an edge of the first electronic component, and the direction penetrates a first sidewall and a second sidewall of the interconnector, the second sidewall is farther from the center of the first electronic component than the first sidewall is, and the conductive trace is outside a projection region of the second sidewall.

Electronic device package and method of manufacturing the same

An optical device includes a first circuit layer, a light detector, a first conductive pillar and an encapsulant. The first circuit layer has an interconnection layer and a dielectric layer. The light detector is disposed on the first circuit layer. The light detector has a light detecting area facing away from the first circuit layer and a backside surface facing the first circuit layer. The first conductive pillar is disposed on the first circuit layer and spaced apart from the light detector. The first conductive pillar is electrically connected to the interconnection layer of the first circuit layer. The encapsulant is disposed on the first circuit layer and covers the light detector and the first conductive pillar. The light detector is electrically connected to the interconnection layer of the first circuit layer through the first conductive pillar. The backside surface of the light detector is exposed from the encapsulant.

Optical device and electronic device

A semiconductor device package includes a substrate, a first patterned conductive layer, a second patterned conductive layer, a dielectric layer, a third patterned conductive layer and a connector. The substrate has a top surface. The first patterned conductive layer is on the top surface of the substrate. The second patterned conductive layer contacts the first patterned conductive layer. The second patterned conductive layer includes a first portion, a second portion and a third portion. The second portion is connected between the first portion and the third portion. The dielectric layer is on the top surface of the substrate. The dielectric layer covers the first patterned conductive layer and surrounds the second portion and the third portion of the second patterned conductive layer. The first portion of the second patterned conductive layer is disposed on the dielectric layer. The third patterned conductive layer is on the second patterned conductive layer, and the connector is directly on the third patterned conductive layer.

Semiconductor device packages including an inductor and a capacitor

An assembly structure and a method for manufacturing an assembly structure are provided. The assembly structure includes a wiring structure and a semiconductor element. The wiring structure includes at least one dielectric layer and at least one circuit layer in contact with the at least one dielectric layer, and defines an accommodating recess recessed from a top surface of the wiring structure. The wiring structure has a smooth surface extending from the top surface of the wiring structure to a surface of the accommodating recess. The semiconductor element is disposed in the accommodating recess.

Assembly structure and method for manufacturing the same

A semiconductor device package includes a glass carrier, a package body, a first circuit layer and a first antenna layer. The glass carrier has a first surface and a second surface opposite to the first surface. The package body is disposed on the first surface of the glass carrier. The package body has an interconnection structure penetrating the package body. The first circuit layer is disposed on the package body. The first circuit layer has a redistribution layer (RDL) electrically connected to the interconnection structure of the package body. The first antenna layer is disposed on the second surface of the glass carrier.

Semiconductor device package and method of manufacturing the same

A capacitor bank structure includes a plurality of capacitors, a protection material, a first dielectric layer and a plurality of first pillars. The capacitors are disposed side by side. Each of the capacitors has a first surface and a second surface opposite to the first surface, and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes are disposed adjacent to the first surface for external connection, and the second electrodes are disposed adjacent to the second surface for external connection. The protection material covers the capacitors, sidewalls of the first electrodes and sidewalls of the second electrodes, and has a first surface corresponding to the first surface of the capacitor and a second surface corresponding to the second surface of the capacitor. The first dielectric layer is disposed on the first surface of the protection material, and defines a plurality of openings to expose the first electrodes. The first pillars are disposed in the openings of the first dielectric layer and protrude from the first dielectric layer.

Capacitor bank structure and semiconductor package structure

A semiconductor device package includes a first dielectric layer, a conductive pad and an electrical contact. The first dielectric layer has a first surface and a second surface opposite to the first surface. The conductive pad is disposed within the first dielectric layer. The conductive pad includes a first conductive layer and a barrier. The first conductive layer is adjacent to the second surface of the first dielectric layer. The first conductive layer has a first surface facing the first surface of the first dielectric layer and a second surface opposite to the first surface. The second surface of the first conductive layer is exposed from the first dielectric layer. The barrier layer is disposed on the first surface of the first conductive layer. The electrical contact is disposed on the second surface of the first conductive layer of the conductive pad.

A semiconductor package device includes a transparent carrier, a first patterned conductive layer, a second patterned conductive layer, and a first insulation layer. The transparent carrier has a first surface, a second surface opposite to the first surface and a third surface extended between the first surface and the second surface. The first patterned conductive layer is disposed on the first surface of the transparent carrier. The first patterned conductive layer has a first surface coplanar with the third surface of the transparent carrier. The second patterned conductive layer is disposed on the first surface of the transparent carrier and electrically isolated from the first patterned conductive layer. The first insulation layer is disposed on the transparent carrier and covers the first patterned conductive layer.

Semiconductor package device and method of manufacturing the same

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Kaohsiung, Taiwan

Teck-Chong Lee