Hitachi-high-technologies Corporation

Hitachi, Ltd.

Tatsuya Maeda

Hiroki Kawada

Takashi Iizumi

Chie Shishido

Mayuka Oosaki

Hidetoshi Morokuma

Satoru Yamaguchi

Osamu Komuro

Yasuhiko Ozawa

Juntaro Arima

Mitsugu Sato

Mitsuji Ikeda

Katsuhiro Sasada

Atsuko Yamaguchi

Osamu Nasu

Hiroshi Fukuda

Tadashi Otaka

Atsushi Takane

Fumihiro Sasajima

Kazuhiro Ueda

Yoshihito Kinoshita

Kota Imai

Hideo Todokoro

Yasunari Sohda

Hiroyuki Saito

Shigeto Isakozawa

Hiromi Inada

Atsushi Kobaru

Junichi Kakuta

Susumu Koyama

This power generation planning device, which carries out plan creation or plan adjustment for a power generation plan for a generator and a ship allocation plan for a transport ship for power generation fuel for the generator, is provided with: an adjustment range calculation unit that calculates an adjustable range and adjustment cost for generator management based on a power generation plan, and an adjustable range and adjustment cost for fuel management based on a ship allocation plan; and an imbalance countermeasure amount calculation unit that, under a constraint condition pertaining to the power generation plan and the ship allocation plan, creates a plan or calculates an adjustment amount for generator management and fuel management that optimizes a prescribed indicator within the adjustable ranges of the generator management and the fuel management.

Power generation planning device and power generation planning method

This power supply and demand planning device includes: an output range calculation unit that calculates the output range of a power generator that satisfies a plurality of restriction conditions; a power generation output range output calculation unit that calculates the power generator output in a single cross section on the basis of the calculated output range calculated; and a past specified cross section output correction unit that calculates a target output in the single cross section when a restriction condition violation occurs in the power generator output in the calculated single cross section calculated, and in order to eliminate a restriction condition violation, corrects the output range and the power generator output in the single cross section and a past cross section further in the past than the single cross section so that the power generator output in the single cross section becomes the target output.

Power supply and demand planning device

In order that a displacement between patterns of different heights, formed on a sample in a plurality of different pattern-forming steps, can be measured at fixed throughput and with high accuracy, correspondence between parameters of lenses and beam deflector of an electron optical system and an angle of incidence of a beam upon the sample is recorded as data, then a correction value for the amount of displacement or edge positions is calculated, and a true amount of displacement is calculated from the correction value and an image under observation.

Method and apparatus for measuring displacement between patterns and scanning electron microscope installing unit for measuring displacement between patterns

An object of the present invention is to provide a pattern measuring apparatus which performs high-accuracy concavity/convexity determination (e.g., distinguishing between a line segment and space) while simultaneously reducing the dose of a beam falling onto a pattern to be measured. To attain the object, this invention proposes a pattern measuring apparatus which specifies a pattern in a measurement object area by scanning a tilted bean with respect to another area different from the measurement object area and then performs measurement based on the pattern-specifying result. With such arrangement, it becomes possible to perform measurement without the risk of wrong pattern designation while lowering the dose of a beam hitting the measurement object area.

Pattern measuring apparatus

An object of the present invention is to provide a scanning electron microscope for reducing a process concerning inspection positioning or an input operation, thereby functioning with high precision at high speed. To accomplish the above object, the present invention provides a scanning electron microscope having a function for identifying a desired position on the basis of a pattern registered beforehand, which includes a means for setting information concerning the pattern kind, the interval between a plurality of parts constituting the pattern, and the size of parts constituting the pattern and a means for forming a pattern image composed of a plurality of parts on the basis of the information obtained by the concerned means.

Scanning electron microscope

A system for controlling a tool-to-tool disparity between a plurality of scanning electron microscopes includes a measuring unit for measuring a tool-to-tool disparity between plural scanning electron microscopes based on information extracted from secondary electron images which are captured by imaging a reference pattern, a tool state monitoring unit for monitoring tool states of each of the plural scanning electron microscopes, and an output unit for displaying on a screen a relationship between the tool-to-tool disparity between the plural scanning electron microscopes and tool states of each of the plural scanning electron microscopes monitored by the tool state monitoring unit. The tool state monitoring unit monitors the tool states of each of the plural scanning electron microscopes while imaging the reference pattern by using each of the plural scanning electron microscopes.

Tool-to-tool matching control method and its system for scanning electron microscope

A method and apparatus for setting a sample observation condition and a method and apparatus for sample observation which allow sample observation by speedily and simply finding an optimum condition while suppressing damage to the sample are provided. The setting of a sample observation condition according to the present invention is realized by an electron beam apparatus acquiring a profile at a predetermined evaluation location of a sample under a reference observation condition, by a processing section judging whether or not the above described acquired profile is located within a predetermined setting range and setting an optimum observation condition to be used for sample observation based on this judgment result. More specifically, locations where the condition can be examined are registered beforehand first and then a jump is made to the corresponding location which is irradiated with an electron beam (hereinafter referred to as 'predosing') at a low magnification, the surface of the sample is charged, enlarged to an observation magnification and secondary electron information on the target location is obtained. After that, secondary electron information is obtained at any time while performing predosing, it is successively judged from the information whether the pattern bottom part can be observed/measured or whether or not the sample is destroyed and an optimum observation condition is thereby found.

Method and apparatus for setting sample observation condition, and method and apparatus for sample observation

The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.

Charged particle beam apparatus and methods for capturing images using the same

Information indicating the reason for a failure of template matching is provided. Difference information between a first image, which is referred to as a template, and a third image that is selected by the operator from a second image and that is larger than the template is displayed.

Image processing apparatus for analysis of pattern matching failure

A method and apparatus for alignment and astigmatism correction for a scanning electron microscope can prevent an alignment or correction error attributable to the conditions of a particular specimen. First, a difference is determined between optimal values acquired from an automatic axis alignment result on a standard sample, and those obtained from each of a plurality automatic axis alignment results on a observation target sample. An optimal value is then adjusted using the standard sample, by use of the difference thus obtained. Correspondingly, an optimal stigmator value (astigmatism correction signal) is acquired by using the standard sample, and storing the optimal stigmator value as a default value. The optimal stigmator value and the default value depending on the height of an observation target sample pattern are added, and an astigmatism correction is performed on the basis of the resultant stigmator value.

Scanning electron microscope alignment method and scanning electron microscope

It is facilitated in a scanning electron microscope to save the labor of executing the reproduction test, conduct basic analysis on a problem caused in execution of the automatic observation process, and confirm details resulting in the error. Upon detecting an error from an abnormality, the scanning electron microscope extracts a sample image lm(t) obtained by retroceding from a sample image lm(te) stored so as to be associated with time te of error occurrence by a predetermined video quantity (for example, total recording time period t) previously set and registered by an input-output device, from sample images stored in a recording device while being overwritten, and stores a resultant sample image in another recording device.

A system for controlling a tool-to-tool disparity between a plurality of scanning electron microscopes includes a measuring unit for measuring a tool-to-tool disparity between plural scanning electron microscopes based on information extracted from secondary electron images which are captured by imaging a reference pattern formed on a wafer, a tool state monitoring unit for monitoring tool states of each of the plural scanning electron microscopes, and an output unit for displaying on a screen a relationship between the tool-to-tool disparity between the plural scanning electron microscopes and tool states of each of the plural scanning electron microscopes monitored by the tool state monitoring unit. The tool state monitoring unit monitors the tool states of each of the plural scanning electron microscopes while imaging the reference pattern formed on the wafer by using each of the plural scanning electron microscopes.

Equipment extracts components of spatial frequency that need to be evaluated in manufacturing a device or in analyzing a material or process out of edge roughness on fine line patterns and displays them as indexes. The equipment acquires data of edge roughness over a sufficiently long area, integrates components corresponding to a spatial frequency region being set on a power spectrum by the operator, and displays them on a length measuring SEM. Alternatively, the equipment divides the edge roughness data of the sufficiently long area, computes long-period roughness and short-period roughness that correspond to an arbitrary inspection area by performing statistical processing and fitting based on theoretical calculation, and displays them on the length measuring SEM.

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Hitachinaka, Japan

Tatsuya Maeda