Tokyo Electron Limited

Tocalo Co., Ltd.

Tatsuya Handa

Nobuyuki Nagayama

Masaru Nishino

Yasushi Aiba

Akihiro Yoshimura

Reiko Sasahara

Kenshiro Asahi

Masatsugu Makabe

Ryotaro Midorikawa

Keigo Kobayashi

Tetsuya Niya

Masaki Furusawa

Yuji Saegusa

There is provided a gas treatment apparatus for performing gas treatment on a substrate. The gas treatment apparatus includes: a chamber in which the substrate is accommodated; a gas supply mechanism configured to individually supply a fluorine-containing gas and an alkaline gas; and a gas introduction member configured to cause the fluorine-containing gas and the alkaline gas supplied from the gas supply mechanism to merge with each other and introduce a mixed gas in which the fluorine-containing gas and the alkaline gas are mixed into the chamber. A portion of the gas introduction member including a merging point of the fluorine-containing gas and the alkaline gas is made of an aluminum-based material. A resin coating is formed on at least the portion including the merging point.

Gas treatment apparatus

A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.

Plasma processing apparatus and method

A substrate processing apparatus capable of preventing the abnormal discharge from being generated on a substrate. A housing chamber houses the substrate. A mounting stage arranged in the housing chamber, is configured to enable the substrate to be mounted thereon. A disc-like electrode structure is connected to a high-frequency power supply, and connected to a gas supply apparatus via at least one gas supply system. The electrode structure has therein at least one buffer chamber and a plurality of connecting sections connected to the gas supply system. The buffer chamber is communicated with the inside of the housing chamber via a number of gas holes, and is communicated with the gas supply system via the plurality of connecting sections. The plurality of connecting sections for the buffer chamber are arranged on the circumference of a circle centering around the center of the electrode structure at equal intervals.

Substrate processing apparatus and electrode structure

Film forming equipment () is provided with a treatment container (), a gas supplying system for supplying the container with a treatment gas including a film forming gas, and an exhaust system for exhausting the atmosphere in the container. In the treatment container, a placing table () having a placing plane for placing a flat board shaped body to be treated (W) is arranged. The body to be treated on the placing table is heated by a heater (). A clamping apparatus () is provided to abut/separate to and from a surface peripheral part of the body to be treated, so as to press/release the body to be treated on and from the placing table. On the placing plane of the placing table, a suction structure () having a recessed part () is formed for temporarily sucking the body to be treated by pressure difference, by forming a substantially hermetic space between the placing plane and the rear plane of the body to be treated.

Film forming equipment and film forming method

Growing community of inventors

Nirasaki, Japan

Tatsuya Handa