Tokyo Electron Limited

Tohoku University

Toyko Electron Limited

Tatsuo Nishita

Toshio Nakanishi

Masayuki Kohno

Naoyuki Satoh

Satoshi Taga

Hitoshi Kato

Yoshihiro Sato

Atsushi Endo

Minoru Honda

Kohei Fukushima

Yoshihiro Hirota

Yutaka Fujino

Takeshi Kumagai

Shuuichi Ishizuka

Tetsuo Endoh

Keisuke Suzuki

Tsukasa Yonekawa

Junya Miyahara

Toru Sato

A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

Substrate placing table and substrate processing apparatus

A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas.

Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device

A plasma cleaning method is performed in a plasma CVD apparatus for depositing a silicon nitride film on a surface of a target substrate, and includes a stage (S) of supplying a cleaning gas containing NFgas into a process container, thereby removing extraneous deposits formed on portions inside the process container; a stage (S) of supplying a gas containing hydrogen gas into the process container and generating plasma thereof, thereby removing residual fluorine inside the process container; and a stage (S) of supplying a gas containing a rare gas into the process container and generating plasma thereof, thereby removing residual hydrogen inside the process container.

Plasma cleaning method and plasma CVD method

A Plasma processing apparatus () introduces microwaves into a chamber () by a plane antenna () which has a plurality of holes. A material gas, which contains a nitrogen-containing compound and a silicon-containing compound, is introduced into the chamber () by using the plasma processing apparatus, and plasma is generated by the microwaves. Then, a silicon nitride film is deposited by the plasma on a surface of an object to be processed. The trap density of the silicon nitride film is controlled by adjusting the conditions of the plasma CVD process.

Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus

The invention provides a MOS semiconductor memory device that achieves excellent data retention characteristics while also achieving high-speed data write performance, low-power operation performance, and high reliability. A MOS semiconductor memory deviceincludes a first insulating filmand fifth insulating filmhaving large bandgapsand, a third insulating filmhaving the smallest bandgap, and a second insulating filmand fourth insulating filminterposed between the third insulating filmand the first and fifth insulating filmsand, respectively, and having intermediate bandgapsand

MOS semiconductor memory device having charge storage region formed from stack of insulating films

Provided is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried out under a given treatment pressure selected from a pressure range of not less than 0.1 Pa and not more than 1333 Pa at a flow ratio between a silicon-containing compound gas and a nitrogen gas (silicon-containing compound gas flow rate/nitrogen gas flow rate) selected from a range of not less than 0.005 and not more than 0.2, whereby the Si/N ratio in the film is controlled to form a silicon nitride film having a band gap size of not less than 2.5 eV and not more than 7 eV.

Forming a silicon nitride film by plasma CVD

A plasma processing apparatus includes a process chamber configured to be vacuum-exhausted; a worktable configured to place a target substrate thereon inside the process chamber; a microwave generation source configured to generate microwaves; a planar antenna including a plurality of slots and configured to supply microwaves generated by the microwave generation source through the slots into the process chamber; a gas supply mechanism configured to supply a film formation source gas into the process chamber; and an RF power supply configured to apply an RF power to the worktable. The apparatus is preset to turn a nitrogen-containing gas and a silicon-containing gas supplied in the process chamber into plasma by the microwaves, and to deposit a silicon nitride film on a surface of the target substrate by use of the plasma, while applying the RF power to the worktable.

Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing method, and plasma CVD apparatus

In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device.

Method of forming gate insulation film, semiconductor device, and computer recording medium

Method of forming gate insulating film, semiconductor device and computer recording medium

A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidation of a surface of an object to be processed in a single processing containerwhich can contain a plurality of objects to be processed, at least a nitride film is exposed on said surface, and said oxidation is performed by mainly using active hydroxyl/oxygen species in a vacuum atmosphere, setting a processing pressure to 133 Pa or below, and setting a processing temperature to 400&#xb0; C. or above. Under these conditions, high interplanar uniformity is maintained and oxide films with favorable film quality are obtained by oxidizing nitride films on the surfaces of a plurality of objects to be processed.

Method of oxidizing member to be treated

A thermal processing system () includes a reaction vessel () capable of forming a silicon nitride film on semiconductor wafers () through interaction between hexachlorodisilane and ammonia, and an exhaust pipe () connected to the reaction vessel (). The reaction vesselis heated at a temperature in the range of 500 to 900&#xb0; C. and the exhaust pipe () is heated at 100&#xb0; C. before disassembling and cleaning the exhaust pipe. Ammonia is supplied through a process gas supply pipe () into the reaction vessel (), and the ammonia is discharged from the reaction vessel () into the exhaust pipe ().

Growing community of inventors

Amagasaki, Japan

Tatsuo Nishita