Tokyo Electron Limited

Tatsuhiro Ueki

Jian Zhang

Yoshifumi Amano

Kazuhiro Aiura

Hiromitsu Nanba

A processing liquid ejection nozzle ejects a processing liquid used for a substrate processing. The processing liquid ejection nozzle includes a nozzle main body and an angle changing mechanism. The nozzle main body includes a first main body formed with a first flow path therein which communicates with a processing liquid supply path, and a second main body bent from the first main body and formed with a second flow path therein which communicates with the first flow path. The angle changing mechanism changes an angle of the nozzle main body in a horizontal direction with respect to a fixing member to which the nozzle main body is fixed.

Processing liquid ejection nozzle, nozzle arm, substrate processing apparatus, and substrate processing method

A substrate processing apparatusis configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatusincludes a rotating/holding unitconfigured to rotate and hold the wafer W; a processing liquid discharging unitconfigured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unita variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controllerconfigured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unitonto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

Substrate processing method of controlling discharge angle and discharge position of processing liquid supplied to peripheral portion of substrate

A substrate processing apparatusis configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatusincludes a rotating/holding unitconfigured to rotate and hold the wafer W; a processing liquid discharging unitconfigured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit; a variation width acquiring unit configured to acquire information upon a variation width of a deformation amount of the peripheral portion of the wafer W; and a discharge controllerconfigured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unitonto the peripheral portion based on the information upon the variation width of the deformation amount of the peripheral portion acquired by the variation width acquiring unit.

Substrate processing apparatus and substrate processing method of controlling discharge angle and discharge position of processing liquid supplied to peripheral portion of substrate

A plasma processing method includes etching a removing target film by supplying onto a peripheral portion of a substrate being rotated a first processing liquid containing hydrofluoric acid and nitric acid at a first mixing ratio; and etching the removing target film by, after supplying the first processing liquid onto the substrate, supplying onto the peripheral portion of the substrate being rotated a second processing liquid containing the hydrofluoric acid and the nitric acid at a second mixing ratio in which a content ratio of the hydrofluoric acid is lower and a content ratio of the nitric acid is higher than in the first processing liquid. When removing the removing target film made of SiGe, amorphous silicon or polysilicon from the peripheral portion thereof, an underlying film, for example, a film made of SiO, which exists under the removing target film, can be appropriately left.

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Koshi, Japan

Tatsuhiro Ueki