Fujimi Incorporated

Fujima Incorporated

Tatsuhiko Hirano

Kenji Sakai

Atsunori Kawamura

Tsuyoshi Matsuda

Junhui Oh

Yasuto Ishida

Shogo Onishi

Yoshihiro Izawa

Yasuyuki Yamato

Shuichi Tamada

Akihito Yasui

Takahiro Umeda

Kazuya Sumita

Hiroshi Mizuno

Katsunobu Hori

[Problem] Provided is a polishing composition which is suitable for polishing a polishing object having a metal wiring layer and capable of diminishing the step defect while maintaining a high polishing rate. [Solution] Provided is a polishing composition used in polishing a polishing object having a metal wiring layer, which contains a metal corrosion inhibitor, a complexing agent, a surfactant, and water and in which the solid surface energy of the polishing object surface after polishing the polishing object using the polishing composition is 30 mN/m or less, and the surfactant is preferably an anionic surfactant.

Polishing composition

A polishing composition contains a water-soluble polymer, a polishing accelerator, and an oxidizing agent. The water-soluble polymer is a polyamide-polyamine polymer having an amine value of 150 mg KOH/1 g&#xb7;solid or greater.

Polishing composition and polishing method

To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. A polishing composition comprising abrasive grains, a processing accelerator, a nonionic surfactant represented by R-POE (I) (wherein R is a Calkyl group having a branched structure, and POE is a polyoxyethylene chain) and having an HLB of from 7 to 12, an anionic surfactant, a protective film-forming agent, an oxidizing agent, and water.

A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.

A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water. This polishing composition is capable of suppressing the occurrence of the dishing.

The present invention provides a polishing composition that inhibits the occurrence of erosion. The polishing composition contains silicon oxide, a polyoxyethylene alkyl ether sulfate, a benzotriazole corrosion inhibitor, an acid, and water. The silicon oxide is preferably colloidal silica, the acid is preferably lactic acid, and the pH of the polishing composition is preferably 1.5 to 4.0.

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Kiyosu, Japan

Tatsuhiko Hirano