Infineon Technologies Ag

Tarek Lutz

Jens Schneider

Markus Menath

Torsten Franke

Günther Ruhl

Fritz Gans

Christian Ebi

Frank Erber

Bernd Schönherr

In a process for producing a mask, layout data is provided for a semiconductor layout. The layout data is fractionated to create control data for a pattern generator. Slivers are identified slivers from the fractionating step. Second control data can be created from an enlarged imaging of the slivers. A first exposure can then be carried out using the control data and a second exposure can be carried out using the second data. The second exposure is carried out with a lower exposure dose as compared to the first exposure.

Process for producing a mask

An apparatus for determining physical properties of a mask blank. The apparatus includes, for example, an illumination device for radiating a predetermined light laterally into the mask blank, a detection device opposite the illumination device for detecting the light which has been scattered and/or runs through the mask blank, and an evaluation device for determining predetermined properties of the mask blank from the light which has been scattered and/or has run through the mask blank and has been detected in the detection device. The present invention likewise provides a method for determining physical properties of a mask blank.

Apparatus and method for determining physical properties of a mask blank

A method for detecting and compensating for positional displacements of a photolithographic mask unit, includes providing mask production data for the writing of the mask unit with an electron beam. A structure density of the mask unit is input and an electron beam deflection is brought about on the mask unit in dependence on the determined structure density of the mask unit. The mask production data are corrected through the use of the determined electron beam deflection, in order to obtain corrected mask production data, and the corrected mask production data are output. A lithography apparatus for mask units with correction of positional displacements of the mask unit, is also provided.

Method for detecting and compensating for positional displacements in photolithographic mask units and apparatus for carrying out the method

A method for compensating for scatter/reflection effects in particle beam lithography includes the following steps: providing at least one layer of a material that is sensitive to particle beams, using at least one particle beam to write predetermined patterns in a limited area of the material that is sensitive to particle beams, and using at least one particle beam to write at least one frame, which surrounds the limited area, into the material that is sensitive to particle beams so that variations in the background dose within the limited area are less than 30% of the maximum background dose within the limited area. This provides the advantage that a considerably more homogeneous background dose and hence considerably less variation in the CD measure, can be produced within the area that is written to by the particle beam, in a simple and cost-effective manner.

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Munich, Germany

Tarek Lutz