Applied Materials, Inc.

Lam Research Corporation

Tao Zhang

Eric A Pape

Upendra V Ummethala

Ole Waldmann

Ajit Balakrishna

Jorge Jose Zaninovich

Kartik Ramaswamy

John C Forster

Shahid Rauf

Jie Yu

Chunlei Zhang

Sidharth Bhatia

Vivek Bharat Shah

Fred Egley

David John Peterson

Siyuan Tian

John Poulose

Venkata Ravishankar Kasibhotla

Xiaoqun Zou

Jairaj Joseph Payyapilly

Yue Guo

Eric Samulon

Kai Liu

Rong Gang Zheng

Zhi Wang

Bala Shyamala Balaji

Ghadeh Hadi

Jeremy Smith

A method includes obtaining, by a processing device, a measurement of a calibrated feedback control device of a process chamber. The method further includes determining, by the processing device, a first indication of performance of a plasma generating apparatus of the process chamber based on the measurement of the calibrated feedback control device. The method further includes obtaining, from a first sensor of the process chamber, a second indication of performance of the plasma generating apparatus. The method further include providing the first indication of performance of the plasma generating apparatus and the second indication of performance of the plasma generating apparatus to a plasma monitoring module. The method further includes obtaining, from the plasma monitoring module, a combined indication of performance of the plasma generating apparatus. The method further includes performing, in view of the combined indication of performance of the plasma generating apparatus, a corrective action.

Plasma generation quality monitoring using multi-channel sensor data

An electronic device manufacturing system capable of obtaining metrology data generated using metrology equipment located within a process chamber that performs a deposition process on a substrate according to a process recipe, wherein the process recipe comprises a plurality of setting parameters, and wherein the deposition process generates a plurality of film layers on a surface of the substrate. The manufacturing system can further generate a correction profile based on the metrology data. The manufacturing system can further generate an updated process recipe by applying the correction profile to the process recipe. The manufacturing system can further cause an etch process to be performed on the substrate according to the updated process recipe.

Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing

A method includes receiving, from one or more sensors, sensor data associated with manufacturing equipment and updating one or more values of a digital replica associated with the manufacturing equipment based on the sensor data. The digital replica comprises a model reflecting a virtual representation of physical elements and dynamics of how the manufacturing equipment operates. One or more outputs indicative of predictive data is obtained from the digital replica and, based on the predictive data, performance of one or more corrective actions associated with the manufacturing equipment is caused.

Performing radio frequency matching control using a model-based digital twin

A method includes receiving first sensor data, generated during a manufacturing process by sensors associated with a substrate manufacturing chamber. The method further includes receiving simulated sensor data generated by a trained physics-based model. The method further includes determining which one or more components of the manufacturing chamber contribute to a difference between the first sensor data and the simulated sensor data. The method further includes causing performance of a corrective action in view of the difference.

Diagnostic methods for substrate manufacturing chambers using physics-based models

Embodiments disclosed herein include a process power controller for a plasma processing tool. In an embodiment, the process power controller includes a process power source optimizer, a source predictor, and a process uniformity controller. In an embodiment, the source predictor is communicatively coupled to the process power source optimizer and the process uniformity controller.

Control and prediction of multiple plasma coupling surfaces and corresponding power transfer

Embodiments disclosed herein include a dynamic load simulator. In an embodiment, the dynamic load simulator comprises an impedance load, a reverse match network, and a smart RF controller. In an embodiment, the smart RF controller comprises a dynamic load generator, and a reverse match controller.

Smart dynamic load simulator for RF power delivery control system

A method includes causing manufacturing equipment to generate a RF signal to energize a processing chamber associated with the manufacturing equipment. The method further includes receiving, from one or more sensors associated with the manufacturing equipment, current trace data associated with the RF signal. The method further includes updating impedance values of a digital replica associated with the manufacturing equipment based on the current trace data. The method further includes obtaining, from the digital replica, one or more outputs indicative of predictive data. The method further includes causing, based on the predictive data, performance of one or more corrective actions associated with the manufacturing equipment.

A non-transitory computer-readable storage medium stores instructions, which when executed by a processing device of a diagnostic server, cause the processing device to perform certain operations. The operations include receiving, from a processing chamber, (i) measurement values of a combined signal that is based on an injection of an alternating signal wave onto a first output signal of a controller of the processing chamber, and (ii) measurement values of a second output signal of the controller that incorporates feedback from the processing chamber. The operations further include generating, based on the measurement values of the combined signal and the measurement values of the second output signal of the controller, a baseline bode fingerprint pertaining to a state associated with the processing chamber. The operations further include storing, in computer storage, the baseline bode fingerprint to be used in performing diagnostics of the processing chamber.

Bode fingerprinting for characterizations and failure detections in processing chamber

A system for controlling a parameter of a plant associated with a substrate processing chamber is disclosed. A measuring circuit measures a response of the plant associated with the substrate processing chamber when the parameter of the plant is changed. A model generating circuit determines a delay and a gain of the plant based on the response. The model generating circuit generates a model of the plant based on the delay, the gain, and a time constant of the plant. A predicting circuit receives a set point for the parameter and a measurement of the parameter, generates a value of a prediction of the parameter based on the set point for the parameter and the measurement of the parameter using the model, wherein the value of the prediction of the parameter does not include the delay, compares the value of the prediction of the parameter with the set point to generate a control signal, and controls the parameter of the plant based on the control signal.

Model-based control of substrate processing systems

A temperature controller is provided and includes interfaces, a compensation controller, summers, and a second controller. An interface receives a bias power signal and a plasma signal. The bias power signal indicates a bias RF power level of a RF generator. The plasma signal indicates a plasma RF power level of another RF generator. Another interface receives a temperature signal indicating a temperature of a substrate support. The compensation controller generates a compensation value based on a bias feed-forward transfer function and the bias RF power level and another compensation value based on a plasma feed-forward transfer function and the plasma RF power level. A summer generates an error signal based on a set point and the temperature. The second controller generates a control signal based on the error signal. Another summer controls an actuator to adjust the temperature based on the compensation values and the control signal.

System and method for substrate support feed-forward temperature control based on RF power

A temperature controller for a substrate support in a substrate processing system includes memory that stores a first model correlating temperatures of a plurality of first thermal control elements (TCEs) arranged in the substrate support and first temperature responses of the substrate support. The first temperature responses correspond to locations on a surface of the substrate support. A temperature estimation module calculates resistances of the first TCEs, determines, based on the calculated resistances, the temperatures of the first TCEs, and estimates, using the stored first model and the determined temperatures of the first TCEs, an actual temperature response of the substrate support. The temperature controller is configured to control the first TCEs based on the actual temperature response of the substrate support.

Virtual metrology method for ESC temperature estimation using thermal control elements

A temperature controller for a substrate processing system includes an interface configured to receive a processing temperature corresponding to a desired processing temperature of a substrate. The temperature controller includes a thermal control element controller configured to selectively control a thermal control element to adjust a temperature of a substrate support. The thermal control element controller is further configured to, prior to the substrate being loaded onto the substrate support, determine at least one of a temperature of the substrate support and a temperature of the substrate and, based on the processing temperature and the at least one of the temperature of the substrate support and the temperature of the substrate, control the thermal control element to adjust the temperature of the substrate support to a setpoint temperature that is different than the processing temperature.

Reducing temperature transition in a substrate support

A method for controlling a substrate temperature in a substrate processing system includes determining a temperature difference between the substrate temperature before the substrate is loaded onto a substrate support device and a desired temperature for the substrate support device and, during a first period, controlling a thermal control element to adjust the temperature of the substrate support device to a temperature value based on the temperature difference. The temperature value is not equal to the desired temperature for the substrate support device. The method further includes loading the substrate onto the substrate support device after the first period begins and before the temperature of the substrate support device returns to the desired temperature and, during a second period that follows the first period, controlling the temperature of the substrate support device to the desired temperature for the substrate support device.

Method for reducing temperature transition in an electrostatic chuck

A system for controlling a substrate temperature in a substrate processing system includes a substrate support device, a controller, a temperature sensor, and a thermal control element (TCE). The controller is configured to, during a first period, control the TCE to adjust the temperature of the substrate support device to a temperature value based on a temperature difference between the substrate temperature before the substrate is loaded onto the substrate support device and a desired temperature for the substrate support device. The temperature value is not equal to the desired temperature. The substrate is loaded onto the substrate support device after the first period begins and before the temperature of the substrate support device returns to the desired temperature. The controller is further configured to, during a second period following the first period, control the temperature of the substrate support device to the desired temperature for the substrate support device.

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San Ramon, CA, United States of America

Tao Zhang