Fujitsu Semiconductor Limited

Fujitsu Corporation

Fujitsu Microelectronics Limited

Tamotsu Owada

Shun-ichi Fukuyama

Hirofumi Watatani

Ken Sugimoto

Yoshihiro Nakata

Kengo Inoue

Atsuo Shimizu

Ei Yano

Katsumi Suzuki

Shinichi Akiyama

Iwao Sugiura

Yasuo Yamagishi

Hirosato Ochimizu

Hikaru Ohira

Shirou Ozaki

Nobuyuki Ohtsuka

Daisuke Mizutani

Yoshikatsu Ishizuki

Hiroshi Kudo

Hisaya Sakai

Masaki Haneda

Yoshiyuki Ohkura

Kenichi Yanai

Sergey Pidin

Satoshi Takesako

Takahiro Kono

Kanae Shimizu

Hideya Hashii

Takahiro Kouno

Naoki Ohara

Shun-ichi Furuyama

Shunn-ichi Fukuyama

Hirofumi Watantani

Hiroko Inoue

Shun-Ichi Fukuyama

A semiconductor device has a semiconductor substrate having a first surface and a second surface, a through electrode penetrating through the semiconductor substrate and having a protrusion protruding from the second surface, and an insulation layer on the second surface, which covers the side surface of the protrusion, has an opening through which to expose the end surface of the protrusion, and has a thickness greater than the length of the protrusion.

Semiconductor device and manufacturing method of semiconductor device

A semiconductor device includes an insulation film formed above a semiconductor substrate, a conductor containing Cu formed in the insulation film, and a layer film formed between the insulation film and the conductor and formed of a first metal film containing Ti and a second metal film different from the first metal film, a layer containing Ti and Si is formed on the surface of the conductor.

Semiconductor device and method for manufacturing semiconductor device

A recessed portion is formed around an outer edge of a device wafer at a peripheral edge portion of a first face of the device wafer. A recessed portion is formed around an outer edge of a support substrate, at a bonding face of the support substrate. The first face of the device wafer and the bonding face of the support substrate are bonded together by an adhesive. The device wafer is ground from a second face side, on the opposite side to the first face, as far as a depth position to reach a bottom face of the recessed portion.

Semiconductor device manufacturing method

A method of manufacturing a semiconductor device includes: forming a first electrode on a first semiconductor substrate; coating the semiconductor substrate with an insulating material having a first viscosity at a first temperature, having a second viscosity lower than the first viscosity at a second temperature higher than the first temperature, and having a third viscosity higher than the second viscosity at a third temperature higher than the second temperature; and forming a first insulating film by curing the insulating material. In this method, the forming the first insulating film includes: bringing the insulating material to the second viscosity by heating the insulating material under a first condition; and bringing the insulating material to the third viscosity by heating the insulating material under a second condition. The first condition and the second condition are different in their temperature rising rate.

Semiconductor device and method of manufacturing the same

A disclosed method of manufacturing a semiconductor device includes forming a groove on a first surface of a semiconductor wafer along an outer periphery of the semiconductor wafer, forming a semiconductor device on the first surface, forming an adhesive layer on the first surface to cover the semiconductor device, bonding a support substrate to the first surface by the adhesive layer, grinding after the adhering of the support substrate a second surface of the semiconductor wafer opposite to the first surface, and dicing after the grinding the semiconductor wafer into individual semiconductor chips.

Manufacturing method of semiconductor device, processing method of semiconductor wafer, semiconductor wafer

A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of Oto bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device

A method for fabricating a semiconductor device, comprising: forming n-channel field-effect transistors on a silicon substrate; forming a first insulating film covering the field-effect transistors; shrinking the first insulating film; forming a second insulating film over the first insulating film; and shrinking the second insulating film, wherein the forming an insulating film covering the field-effect transistors and the shrinking the insulating film are repeated a plurality of time.

Semiconductor device and method for fabricating semiconductor device

A method of manufacturing a semiconductor device includes forming a first insulating film over a semiconductor substrate, forming a trench in the first insulating film, forming a metal interconnect in the trench, exposing the surface of the metal interconnect to a silicon-containing gas, performing a plasma treatment of the surface of the metal interconnect after exposing to the silicon-containing gas, and forming a second insulating film over the metal interconnect.

Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, includes steps of forming an organic insulating film over a semiconductor substrate, irradiating an electron beam to a surface of the organic insulating film, forming recesses in the organic insulating film, forming a conductive material over the organic insulating film and in the recesses, and removing the conductive material on the organic insulating film by a polishing to expose the surface of the organic insulating film and to leave the conductive material buried in recesses of the organic insulating film.

A semiconductor device has a first insulating film formed over a semiconductor substrate, a first opening formed in the first insulating film, a first manganese oxide film formed along an inner wall of the first opening, a first copper wiring embedded in the first opening, and a second manganese oxide film formed on the first copper wiring including carbon.

A method of manufacturing a semiconductor device, in which a stress film having a large stress can be formed with high accuracy over a transistor. The method comprises the steps of: depositing a tensile stress film over the whole surface of a substrate having formed thereon an n-MOSFET; removing by etching the deposited stress film while leaving it on the n-MOSFET; and performing UV irradiation to the remaining stress film. By the UV irradiation, a tensile stress of the stress film is improved. Further, although the stress film is cured by the UV irradiation, occurrence of etching defects caused by the curing is prevented because the UV irradiation is performed after the etching. Thus, speeding-up and high quality of the n-MOSFET can be attained.

Method of manufacturing semiconductor device including forming two stress films and irradiation of one stress film

A method of manufacturing a semiconductor device comprising a wiring structure that includes a vertical wiring section is disclosed. The method comprises a step of forming an interlayer insulation film made of a low dielectric constant material on a wiring layer, a step of forming a silicon oxide film by CVD using SiHgas and COgas on the interlayer insulation film, a step of forming a chemically amplified resist film to cover the silicon oxide film, and a step of forming a first opening in a position on the chemically amplified resist film where the vertical wiring section is to be formed.

Method of manufacturing semiconductor device

A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.

Growing community of inventors

Kawasaki, Japan

Tamotsu Owada