Asm Japan K.k.

Tokyo Electron Limited

Tokyo Electron Limi Ted

Tamihiro Kobayashi

Takayuki Yamagishi

Hideaki Fukuda

Naoto Tsuji

Sumi Tanaka

Yoshinori Morisada

Hiroki Arai

Akira Watanabe

Kunihiro Kaneuchi

A substrate processing apparatus includes: a processing chamber including a processing room; a heating unit that heats the processing chamber; a support including a base thermally isolated from the processing chamber and fixed to the processing chamber, and a stage inserted into an opening provided toward the processing room while being supported by the base at a position distant from a reference position in a horizontal direction, and holds the substrate in the processing room; a stage peripheral member provided in the processing chamber along a periphery of the stage in a state of being inserted into the opening; and a first positioning pin fixed to the processing chamber to position the stage peripheral member, and a second positioning pin fixed to a position farther than the first positioning pin.

Substrate processing apparatus and substrate processing method

There is provided a vacuum processing apparatus for performing a vacuum process by supplying a processing gas onto a substrate arranged in a processing space kept in a vacuum atmosphere, the apparatus comprising: a first transfer space and a second transfer space in each of which the substrate is transferred; and an intermediate wall portion provided between the first transfer space and the second transfer space along the extension direction, wherein one or more processing spaces are arranged in the first transfer space along the extension direction, and two or more processing spaces are arranged in the second transfer space along the extension direction, and wherein a plurality of exhaust paths and a joined exhaust path where the plurality of exhaust paths are joined are formed in the intermediate wall portion.

Vacuum processing apparatus, vacuum processing system and vacuum processing method

A shower platehas protrusionsformed on the front face used with a first electrode in a plasma CVD apparatus. A plane-surface portionis left around apertures of gas inlet holesformed in the shower plate. With protrusionsbeing formed, a surface area of the first electrode is increased.

Shower plate having projections and plasma CVD apparatus using same

A substrate transfer apparatus for loading and unloading substrates in a reaction chamber, includes: an arm having a distal end which is laterally movable in a straight line direction; and end-effectors for loading and unloading substrates in a reaction chamber, which include a lower end-effector and an upper end-effector. One of the lower end-effector or the upper end-effector is movably coupled to the arm at a distal end of the arm, and the other end-effector is fixed to the movably coupled end-effector. The fixed end-effector is fixed to the movably coupled end-effector.

Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus

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Tama, Japan

Tamihiro Kobayashi