Tokyo Ohka Kogyo Co., Ltd.

Takuya Ohhashi

Daijiro Mori

Takahiro Eto

Mai Sugawara

Yukihisa Wada

Masaru Takahama

Yoshihiro Sawada

Takayuki Haraguchi

Tomoya Kumagai

Shigeru Yokoi

Akira Kumazawa

Hiroyuki Iida

Akimasa Nakamura

Naohisa Ueno

Yu Takahashi

Yuriko Shirai

Yueh Chun Liao

A ruthenium-etching solution for carrying out an etching process on ruthenium. The etching solution includes orthoperiodic acid and ammonia, in which a pH is 8 or higher and 10 or lower. A method for manufacturing the ruthenium-etching solution, a method for processing an object to be processed including carrying out an etching process on an object to be processed including ruthenium using the ruthenium-etching solution, and a method for manufacturing a ruthenium-containing wiring.

Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring

A SiGe compound etching solution for selectively etching a compound represented by general formula SiGe(provided that x is 0 or more and less than 1) relative to Si, Ge and an oxide thereof, the SiGe compound etching solution including periodic acid and fluoride.

Etching solution, and method of producing semiconductor element

A diffusion agent composition that, even when a semiconductor substrate which is an object into which an impurity diffusion ingredient is to be diffused has, on a surface thereof, a three-dimensional structure having nano-scale fine voids on a surface thereof, can be evenly coated on the whole area of an inner surface of the fine voids, whereby boron can be diffused into the semiconductor substrate, and a method for manufacturing a semiconductor substrate using the composition. The composition includes an impurity diffusion ingredient and a hydrolyzable Si compound to produce a silanol group, the impurity diffusion ingredient containing a complex compound containing boron having a specific structure.

Impurity diffusion agent composition and method for manufacturing semiconductor substrate

A homogeneous coating solution for forming a light-absorbing layer of a solar cell, the homogeneous solution including: at least one metal or metal compound selected from the group consisting of a group 11 metal, a group 13 metal, a group 11 metal compound and a group 13 metal compound; a Lewis base solvent; and a Lewis acid.

Homogeneous coating solution and production method thereof, light-absorbing layer of solar cell and production method thereof, and solar cell and production method thereof

A stripping solution for photolithography including hydrofluoric acid, a basic compound represented by general formula (b-1), and water. In the formula, Rto Rrepresent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or the like, and at least one of Rto Rrepresents a hydrogen atom. One of Rto Rmay bind with Rto form a ring structure. Yand Yrepresent an alkylene group having 1 to 3 carbon atoms, and n is an integer of 0 to 5. 

Stripping solution for photolithography and pattern formation method

A monosilane compound or bissilane compound of a specific structure having dimethylamino groups is contained in a surface treatment agent used in the hydrophobization treatment of substrate surfaces.

Surface treatment agent and surface treatment method

A method of cleaning a substrate having a metal layer including copper or a copper-containing alloy, the method including cleaning the substrate using a cleaning liquid that includes a mercapto compound represented by one or both of the following formulas (1) and (2), and a solvent containing water and a water-soluble organic solvent: in which R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, when m is 2 or 3, R may be the same or different;HS&#x2014;(CH)&#x2014;OH&#x2003;&#x2003;(2),in which x is an integer of no less than 3.

Cleaning liquid and anticorrosive agent comprising a mercapto compound and solvent

Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to ILD materials, and excellent removal performance in relation to a resist film and a bottom antireflective coating film, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water soluble organic solvent, water, and an inorganic base. The water soluble organic solvent contains a highly polar solvent having a dipole moment of no less than 3.0 D, a glycol ether solvent and a polyhydric alcohol, and the total content of the highly polar solvent and the glycol ether solvent is no less than 30% by mass relative to the total mass of the liquid for lithography.

Cleaning liquid for lithography and method for forming wiring

Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to tungsten, and excellent removal performance in relation to a resist film or the like, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water-soluble organic solvent, water, an inorganic salt and an anti-corrosion agent represented by a general formula (1) below.  In the general formula (1), Rrepresents an alkyl group or an aryl group having 1-17 carbon atoms, and Rrepresents an alkyl group having 1-13 carbon atoms.

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Kawasaki, Japan

Takuya Ohhashi