Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Taketo Kuriyama

Nobuhiro Komine

Manabu Takakuwa

Yosuke Okamoto

Hidenori Sato

Kazutaka Ishigo

Yuji Setta

In a method of forming a mark pattern according to the embodiments, a film to be processed on a substrate is coated with a photosensitive film, and the photosensitive film is irradiated with exposure light via a mask. On the mask, a first circuit pattern having a first transmittance and a mark having a second transmittance and used to measure a superposition between films are arranged. By irradiating with the exposure light, a second circuit pattern having a first film thickness and a mark pattern having a second film thickness thinner than the first film thickness are formed on the substrate.

Method of forming mark pattern, recording medium and method of generating mark data

According to an embodiment, a mask processing apparatus is provided. The mask processing apparatus includes a stage, a laser light source and a rotary mechanism. The stage is configured to hold a mask formed with a pattern to be transferred to a transfer target substrate. The laser light source is configured to output laser light that is radiated into the mask and thereby alters the mask. The rotary mechanism is configured to rotate the stage in an in-plane direction of a pattern formation surface of the mask.

Mask processing apparatus and mask processing method

A photo mask for exposing according to an embodiment includes a mark pattern arranged in a mark region that is different from an effective region to form a semiconductor device; and a regular pattern arranged in the mark region and around the mark pattern and smaller than the mark pattern in size and pitch.

Mask and method for fabricating semiconductor device

Growing community of inventors

Kuwana, Japan

Taketo Kuriyama