Fuji Electric Co., Ltd.

Fuji Electric Device Technology Co., Ltd.

Fuji Electric Technology Co., Ltd.

Takeshi Yokoyama

Tomonori Seki

Kazunaga Onishi

Hirohiko Watanabe

Shunsuke Saito

Yoshikiyo Usui

Masaki Maruyama

Rikihiro Maruyama

Shinichiro Matsunaga

Jun Yabuzaki

Takashi Saito

Kazuya Adachi

Masayuki Soutome

Masaoki Miyakoshi

Atsushi Maruyama

Bin Wan Mat Wan Azha

Masaaki Ochiai

In an example, use of a solder joint may include a solder joint layer having a melted solder material containing Sn as a main component and further containing Ag and/or Sb and/or Cu; and a joined body including a Ni—P—Cu plating layer on a surface of the joined body in contact with the solder joint layer. The Ni—P—Cu plating layer may contain Ni as a main component and may contain 0.5% by mass or greater and 8% by mass or less of Cu and 3% by mass or greater and 10% by mass or less of P, and the Ni—P—Cu plating layer may have a microcrystalline layer at an interface with the solder joint layer.

Solder joint

Provided is an assembly jig set of semiconductor module having a plurality of semiconductor chips, the assembly jig set comprising: a first outer frame jig; and a plurality of inner piece jigs positioned by the first outer frame jig and each having a sectioned shape corresponding to the first outer frame jig, wherein one of the inner piece jigs has a plurality of opening portions for positioning the semiconductor chips. A manufacturing method of a semiconductor module using an assembly jig set is provided.

Assembly jig set and manufacturing method of semiconductor module

The present invention provides a highly reliable solder joint, the solder joint including a solder joint layer having a melted solder material containing Sn as a main component and further containing Ag and/or Sb and/or Cu; and a joined body including a Ni—P—Cu plating layer on a surface in contact with the solder joint layer, wherein the Ni—P—Cu plating layer contains Ni as a main component and contains 0.5% by mass or greater and 8% by mass or less of Cu and 3% by mass or greater and 10% by mass or less of P, the Ni—P—Cu plating layer has a microcrystalline layer at an interface with the solder joint layer, and the microcrystalline layer includes a phase containing microcrystals of a NiCuP ternary alloy, a phase containing microcrystals of (Ni,Cu)P, and a phase containing microcrystals of NiP.

A semiconductor device includes: a multilayer substrate which includes a circuit board and an insulating plate on which the circuit board is formed; and a contact part having a cylindrical hollow hole therein and an open end bonded to a bonding area on the front surface of the circuit board via bonding material. In the case of this semiconductor device, wettability of a contact area of the contact part with respect to the bonding material is approximately equal to wettability of at least the bonding area of the circuit board with respect to the bonding material. Thus, the rising of the bonding material into the hollow hole of the contact part during heating performed when the contact part is bonded to the circuit board is reduced.

Semiconductor device having circuit board to which contact part is bonded

A pressing area set on a main surface of a plate-shaped holding jig is arranged on contact parts. The contact parts are pressed against a multilayer board while heating the multilayer board and the pressing area of the holding jig is inclined with a warp of the multilayer board. In this way, when pressing for bonding the contact parts is performed, even if the multilayer board is warped by the heating and the contact parts are shifted, the contact parts are pressed against the multilayer board without fail.

Semiconductor device manufacturing method

A method of manufacturing a semiconductor device, including preparing a heat-dissipating base, performing a first initial warping or a second initial warping of the heat-dissipating base, soldering a laminated substrate, including a circuit board provided on an insulating board, on the heat-dissipating base after the first or second initial warping, and soldering a semiconductor chip on the circuit board. The first initial warping includes performing shot peening on the rear surface of the heat-dissipating base to form a hardened layer, and subsequently plating the front and rear surfaces of the heat-dissipating base, including the hardened layer formed thereon, with a metal material. The second initial warping includes plating the front and rear surfaces of the heat-dissipating base with the metal material to form a plating layer, and subsequently performing the shot peening on the rear surface of the heat-dissipating base, including the plating layer formed thereon, with the metal material.

Method of manufacturing semiconductor device

A semiconductor device can reduce the number of bonding wires. The semiconductor device includes two or more semiconductor elements each of which has electrodes on a first main surface and a second main surface, an electrode plate that has one surface which is bonded to electrodes on the first main surfaces of the semiconductor elements, with a first bonding material layer interposed therebetween, and extends over the electrodes on the first main surfaces of the two or more semiconductor elements, and a conductive plate that includes a first lead terminal and a semiconductor element bonding portion which is bonded to electrodes on the second main surfaces of the semiconductor elements. A second bonding material layer is interposed therebetween, and is connected to the electrodes on the second main surfaces of the two or more semiconductor elements.

Semiconductor device and method for manufacturing the same

A resin casing is insert-molded while clamp protrusions of clamp portions formed in bonding portions of lead terminals are put between an upper mold and a lower mold. An insulating substrate which has a wiring pattern mounted with semiconductor elements is fitted into an opening portion of the resin casing and adhesively bonded to the resin casing. Electric connection between the semiconductor elements and the bonding portions of the lead terminals and between the wiring pattern on the insulating substrate and the bonding portions of the lead terminals is made by bonding wires. Thus, it is possible to provide a method for manufacturing a semiconductor device and the semiconductor device, in which stress applied to lead terminals of a lead frame formed by insert molding can be suppressed, and wire bonding properties and reliability can be improved even when the thickness of each of the lead terminals is reduced.

Method for manufacturing electrical connections in a semiconductor device and the semiconductor device

The electrode of a thin-type capacitor is connected to the rear surface of a p-type semiconductor substrate which is brought to a ground potential, by a conductive DAF (Die Attach Film) or by a conductive adhesive, and the electrodes of the front surface of the p-type semiconductor substrate are respectively connected with and stacked on the terminals of a thin-type inductor by bumps, whereby manufacturing costs can be reduced while the occurrence of noise can be suppressed and packaging area can be made small.

Composite semiconductor device

An inductor and a method of manufacture results in external electrodes that prevent generation of flashes. The inductor has a ferrite substrate, external electrodes, and a coil. The cross-sectional area of the external electrodes extending across the cutting line is reduced to suppress generation of flashes during the cutting process. Pairs of through-holes are formed at positions in line symmetry about the cutting line. A connection conductor is formed in each of the through-holes, and the external electrodes are formed on the front and back surfaces of the substrate, with the connection conductor connecting each of the pairs of external electrodes on the front and back surfaces. Through-holes can be oblong holes extending across the cutting line, and the external electrodes can extend away from the cutting line.

Inductor and method of manufacturing the same

A micro power converter is provided in which magnetic flux passing outside of external electrodes and second connection conductors is decreased to reduce noises, and at the same time, adhesiveness of molding resin is preserved to provide excellent humidity resistance.

Growing community of inventors

Matsumoto, Japan

Takeshi Yokoyama